Siemens PZTA64, PZTA63 Datasheet
PNP Silicon Darlington Transistors PZTA 63
PZTA 64
● For general AF applications
● High collector current
● High current gain
● Complementary types: PZTA 13, PZTA 14 (NPN)
Type Ordering Code
PZTA 63
PZTA 64
Marking
PZTA 63
PZTA 64
(tape and reel)
Q62702-Z2031
Q62702-Z2032
Pin Configuration
1 2 3 4
B C E C
Package
SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCES V
Collector-base voltage VCB0
Emitter-base voltage VEB0
30
30
10
Collector current IC mA500
Peak collector current ICM 800
Base current I
Peak base current I
Total power dissipation, T
S = 124 ˚C
Junction temperature Tj ˚C
B 100
BM 200
tot W
P
1.5
150
1)
Storage temperature range T
stg
Thermal Resistance
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 72 K/W
th JS ≤ 17
– 65 … + 150
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
PZTA 63
PZTA 64
UnitValuesParameter Symbol
min. typ. max.
V
(BR)CES 30 – –
C = 100 µA
Collector-base breakdown voltage
C = 100 µA, IB = 0
Emitter-base breakdown voltage
E = 10 µA, IC = 0
Collector-base cutoff current
CE = 30 V, IE = 0
V
CE = 30 V, IE = 0, TA = 150 ˚C
V
EB = 10 V, IC = 0
V
V
(BR)CB0 30 – –
V
(BR)EB0 10 – –
CB0
I
–
–
I
EB0 – – 100
–
–
100
10
hFE
C = 10 mA, VCE = 5 V PZTA 63
PZTA 64
C = 100 mA, VCE = 5 V PZTA 63
PZTA 64
Collector-emitter saturation voltage
C = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage
C = 100 mA, IB = 0.1 mA
1)
1)
VCEsat – – 1.5
VBEsat – – 2.0
5000
10000
10000
20000
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
nA
µA
nAEmitter-base cutoff current
–DC current gain
V
AC characteristics
C = 50 mA, VCE = 5 V, f = 100 MHz
f
T 125 – –
MHzTransition frequency
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
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