Siemens PZT2907, PZT2907A Datasheet
PNP Silicon Switching Transistors PZT 2907
PZT 2907 A
● High DC current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
● Complementary types: PZT 2222 (NPN)
PZT 2222 A (NPN)
Type Ordering Code
PZT 2907
PZT 2907 A
Marking
ZT 2907
ZT 2907 A
(tape and reel)
Q62702-Z2028
Q62702-Z2025
Pin Configuration
1 2 3 4
B C E C
Package
SOT-223
Maximum Ratings
Parameter Symbol Values Unit
PZT 2907 PZT 2907 A
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Total power dissipation, T
S = 110 ˚C
Junction temperature Tj ˚C
Storage temperature range T
CE0 V
40 60
60
EB0
5
600
tot W
P
1.5
150
stg
– 65 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Rth JA ≤ 87 K/W
Junction - soldering point Rth JS ≤ 27
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
PZT 2907
PZT 2907 A
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA, IB = 0 PZT 2907
PZT 2907 A
Collector-base breakdown voltage
C = 10 µA, IB = 0 PZT 2907
(BR)CB0
V
PZT 2907 A
Emitter-base breakdown voltage
E = 10 µA, IE = 0
Collector-base cutoff current
V
(BR)EB0 5––
ICB0
VCB = 50 V, IE = 0 PZT 2907
CB = 50 V, IE = 0, TA = 150 ˚C PZT 2907
V
PZT 2907 A
PZT 2907 A
I
EB = 3 V, IC = 0
V
Collector-emitter cutoff current
CE = 30 V, +VBE = 0.5 V
V
Collector-base cutoff current
CE = 30 V, +VBE = 0.5 V
V
EB0 ––10
I
CEV ––50
I
EBV ––50
40
60
60
60
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
20
10
20
10
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter-base cutoff current
DC current gain
C = 0.1 mA, VCE = 10 V PZT 2907
1)
PZT 2907 A
C = 1 mA, VCE = 10 V PZT 2907
PZT 2907 A
C = 10 mA, VCE = 10 V PZT 2907
PZT 2907 A
C = 150 mA, VCE = 10 V PZT 2907
PZT 2907 A
C = 500 mA, VCE = 10 V PZT 2907
PZT 2907 A
35
75
50
100
75
100
100
100
30
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
300
–
–
–hFE
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
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