Siemens MPSA93, MPSA92 Datasheet
PNP Silicon High-Voltage Transistors
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: MPSA 42
MPSA 43 (NPN)
MPSA 92
MPSA 93
1
2
3
Type Marking Ordering Code Pin Configuration Package
123
MPSA 92
MPSA 93
MPSA 92
MPSA 93
Q68000-A5906
Q68000-A4810
E B C TO-92
Maximum Ratings
Parameter Symbol Values Unit
MPSA 92 MPSA 93
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TC = 66 ˚C
Junction temperature
V
CE0
V
CB0
V
EB0
I
C
I
B
2)
P
tot
T
j
300 200 V
300 200
5
500 mA
100
625 mW
150 ˚C
1)
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case
1)
For detailed information see chapter Package Outlines.
2)
Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm.
2)
R
R
th JA
th JC
≤ 200 K/W
≤ 135
Semiconductor Group 1 5.91
MPSA 92
MPSA 93
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Limit Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0 MPSA 92
C
MPSA 93
Collector-base breakdown voltage
I
= 100 µA, IB = 0 MPSA 92
C
MPSA 93
Emitter-base breakdown voltage
I
= 100 µA, IB = 0
E
Collector-base cutoff current
V
= 200 V MPSA 92
CB
V
= 160 V MPSA 93
CB
V
= 200 V, TA = 150 °C MPSA 92
CB
V
= 160 V, TA = 150 °C MPSA 93
CB
Emitter-base cutoff current
V
= 3 V, IC = 0
BE
DC current gain
I
= 1 mA, VCE = 10 V
C
I
= 10 mA, VCE = 10 V
C
I
= 30 mA, VCE = 10 V
C
Collector-emitter saturation voltage
I
= 20 mA, IC = 2 mA MPSA 92
C
1)
1)
MPSA 93
Base-emitter saturation voltage
I
= 20 mA, IB = 2 mA
C
1)
V
(BR)CE0
V
(BR)CB0
V
(BR)EB0
I
CB0
I
CER
h
FE
V
CEsat
V
BEsat
V
300
200
300
200
–
–
–
–
–
–
–
–
5––
–
–
–
–
–
–
–
–
100
100
20
20
nA
nA
µA
µA
– – 100 nA
–
25
40
25
–
–
–
–
–
–
V
–
–
–
–
0.5
0.4
– – 0.9
AC Characteristics
Transition frequency
I
= 20 mA, VCE = 10 V, f = 100 MHz
C
Collector-base capacitance
V
= 20 V, f = 1 MHz MPSA 92
CB
MPSA 93
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 2
f
C
T
obo
– 70 – MHz
pF
–
–
–
–
6
8
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