Siemens BUZ339 Datasheet
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 339
Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on
)
Package Ordering Code
BUZ 339 500 V 11.5 A 0.5 Ω TO-218 AA C67078-S3133-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 33 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
Avalanche energy, single pulse
I
= 11.5 A,
D
L
= 10.8 mH,
V
DD
T
= 25 °C
j
= 50 V,
R
GS
= 25 Ω
Gate source voltage
Power dissipation
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
P
tot
A
11.5
46
11.5
16 mJ
790
±
20 V
W
T
= 25 °C
C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
T
T
R
R
j
stg
thJC
thJA
170
-55 ... + 150 °C
-55 ... + 150
≤ 0.74 K/W
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 1 07/96
BUZ 339
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
DS
DS
= 500 V,
= 500 V,
V
V
= 0 V,
GS
= 0 V,
GS
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
500 - -
2.1 3 4
-
-
0.1
10
1
100
- 10 100
V
µA
nA
Drain-Source on-resistance
V
= 10 V,
GS
I
= 7.5 A
D
R
DS(on)
Ω
- 0.4 0.5
Semiconductor Group 2 07/96
BUZ 339
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 7.5 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
GS
= 10 V,
I
= 2.9 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
8 14 -
pF
- 2200 3000
- 260 400
- 100 150
ns
R
GS
= 50
Ω
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
= 2.9 A
D
I
= 2.9 A
D
I
= 2.9 A
D
t
r
t
d(off)
t
f
- 35 50
- 70 100
- 450 680
- 110 160
Semiconductor Group 3 07/96
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