Siemens BUZ311 Datasheet

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

BUZ 311

Pin 1 Pin 2 Pin 3

G D S

Type

V

DS

I

D

R

DS(on

)

Package Ordering Code

BUZ 311 1000 V 2.5 A 5 Ω TO-218 AA C67078-A3102-A2

Maximum Ratings Parameter Symbol Values Unit

Drain source voltage Drain-gate voltage

R

= 20 k

GS

Ω

Continuous drain current

T

= 25 °C

C

Pulsed drain current

T

= 25 °C

C

Gate source voltage Power dissipation

T

= 25 °C

C

Operating temperature

V

DS

V

DGR

I

D

I

Dpuls

V

GS

P

tot

T

j

1000 V

1000

A

2.5

10

± 20 V

W

78

-55 ... ...+ 150 °C

Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient

T R R

stg

thJC thJA

-55 ... ...+ 150

≤

1.6 K/W

75 DIN humidity category, DIN 40 040 C IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

BUZ 311

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V

= 1000 V,

DS

V

= 1000 V,

DS

V V

GS GS

= 0 V, = 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

1000 - -

2.1 3 4

-

20 100

250 1000

- 10 100

V

µA

nA

Drain-Source on-resistance

V

= 10 V,

GS

I

= 1.5 A

D

R

DS(on)

Ω

- 4.5 5

Semiconductor Group 2 07/96

BUZ 311

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 1.5 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V

= 30 V,

DD

V

GS

= 10 V,

I

= 2 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

0.7 1.5 pF

- 1600 2100

- 70 120

- 30 55 ns

R

GS

= 50

Ω

Rise time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Fall time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 2 A

D

I

= 2 A

D

I

= 2 A

D

t

r

t

d(off)

t

f

- 30 45

- 40 60

- 110 140

- 60 80

Semiconductor Group 3 07/96