Siemens BUZ272 Datasheet

SIPMOS ® Power Transistor
• P channel
• Enhancement mode
BUZ 272
Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on
)
Package Ordering Code
BUZ 272 -100 V -15 A 0.3 TO-220 AB C67078-S1454-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
T
= 25 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche energy, single pulse
I
= -15 A,
D
L
= 1.93 mH,
V
DD
T
= -25 V, = 25 °C
j
R
GS
= 25
Gate source voltage Power dissipation
T
= 25 °C
C
Operating temperature
I
D
I
Dpuls
E
AS
V
GS
P
tot
T
j
A
-15
-60 mJ
290 ± 20 V
W
125
-55 ... + 150 °C Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient
T R R
stg
thJC thJA
-55 ... + 150
1 K/W
75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group
1 07/96
BUZ 272
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= -0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
= -100 V,
DS
V
= -100 V,
DS
V V
GS GS
= 0 V, = 0 V,
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= -20 V,
GS
V
DS
= 0 V
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
-100 - -
-2.1 -3 -4
-
-
-0.1
-10
-1
-100
- -10 -100
V
µA
nA
Drain-Source on-resistance
V
= -10 V,
GS
I
= -9.5 A
D
R
DS(on)
- 0.2 0.3
Semiconductor Group 2 07/96
BUZ 272
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
2
DS
I
*
D * RDS(on)max, ID
= -9.5 A
Input capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Turn-on delay time
V
= -30 V,
DD
V
GS
= -10 V,
I
D
= -2.9 A
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
1.5 4.5 ­pF
- 2000 2700
- 360 540
- 120 180 ns
R
GS
= 50
Rise time
V R
DD
GS
= -30 V,
= 50
V
GS
Turn-off delay time
V R
DD
GS
= -30 V,
= 50
V
GS
Fall time
V R
DD
GS
= -30 V,
= 50
V
GS
= -10 V,
= -10 V,
= -10 V,
I
= -2.9 A
D
I
= -2.9 A
D
I
= -2.9 A
D
t
r
t
d(off)
t
f
- 30 45
- 120 180
- 125 170
- 120 160
Semiconductor Group 3 07/96
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