Siemens BUZ21L Datasheet
BUZ 21 L
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Type
V
DS
I
D
R
DS(on
BUZ 21 L 100 V 21 A 0.085
Maximum Ratings
Parameter
Ω
Pin 1 Pin 2 Pin 3
G D S
)
Package Ordering Code
TO-220 AB C67078-S1338-A2
Symbol Values Unit
Continuous drain current
T
= 25 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
Avalanche energy, single pulse
I
= 21 A,
D
L
= 340 µH,
V
DD
T
= 25 V,
= 25 °C
j
R
GS
= 25
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
= 25 °C
C
Operating temperature
Storage temperature
Thermal resistance, chip case
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
V
gs
P
tot
T
j
T
stg
R
thJC
A
21
84
21
11.5 mJ
100
±
±
14
20
V
W
75
-55 ... + 150 °C
-55 ... + 150
≤
1.67
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group
1 01/97
BUZ 21 L
Electrical Characteristics,
at
T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
= 0.25 mA,
I
D
= 25 °C
T
j
Gate threshold voltage
V
GS
=
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
DS
DS
= 100 V,
= 100 V,
V
V
GS
GS
= 0 V,
= 0 V,
= 25 °C
T
j
= 125 °C
T
j
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
GS
= 5 V,
= 10.5 A
I
D
= 25°C, unless otherwise specified
j
Symbol Values Unit
min. typ. max.
V
(BR)DSS
100 - -
V
GS(th)
1.2 1.6 2
I
DSS
-
-
I
GSS
- 10 100
R
DS(on)
- 0.075 0.085
0.1
10
V
µA
1
100
nA
Ω
Semiconductor Group
2 01/97
BUZ 21 L
Electrical Characteristics,
Parameter
Dynamic Characteristics
Transconductance
≥
2
V
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Output capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Reverse transfer capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Turn-on delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 5 V,
= 3 A
I
D
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
g
fs
= 10.5 A
C
iss
8 14 -
- 1200 1500
C
oss
- 320 580
C
rss
- 160 260
t
d(on)
- 25 40
S
pF
ns
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 5 V,
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 5 V,
Fall time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 5 V,
= 3 A
I
D
= 3 A
I
D
= 3 A
I
D
t
r
t
d(off)
t
f
- 110 170
- 210 270
- 100 130
Semiconductor Group
3 01/97
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