Siemens BUZ21L Datasheet

BUZ 21 L

SIPMOS

®

Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Type

V

DS

I

D

R

DS(on

BUZ 21 L 100 V 21 A 0.085

Maximum Ratings Parameter

Ω

Pin 1 Pin 2 Pin 3

G D S

)

Package Ordering Code

TO-220 AB C67078-S1338-A2

Symbol Values Unit

Continuous drain current

T

= 25 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche current,limited by

T

jmax

Avalanche energy,periodic limited by Avalanche energy, single pulse

I

= 21 A,

D

L

= 340 µH,

V

DD

T

= 25 V,

= 25 °C

j

R

GS

= 25

Ω

Gate source voltage Gate-source peak voltage,aperiodic Power dissipation

T

= 25 °C

C

Operating temperature Storage temperature Thermal resistance, chip case

T

jmax

I

D

I

Dpuls

I

AR

E

AR

E

AS

V

GS

V

gs

P

tot

T

j

T

stg

R

thJC

A

21

84 21

11.5 mJ

100

± ±

14 20

V

W

75

-55 ... + 150 °C

-55 ... + 150

≤

1.67

K/W

Thermal resistance, chip to ambient

R

thJA

75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group

1 01/97

BUZ 21 L

Electrical Characteristics,

at

T

Parameter

Static Characteristics

Drain- source breakdown voltage

V

GS

= 0 V,

= 0.25 mA,

I

D

= 25 °C

T

j

Gate threshold voltage

V

GS

=

V

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 100 V, = 100 V,

V V

GS GS

= 0 V, = 0 V,

= 25 °C

T

j

= 125 °C

T

j

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

Drain-Source on-resistance

V

GS

= 5 V,

= 10.5 A

I

D

= 25°C, unless otherwise specified

j

Symbol Values Unit

min. typ. max.

V

(BR)DSS

100 - -

V

GS(th)

1.2 1.6 2

I

DSS

-

I

GSS

- 10 100

R

DS(on)

- 0.075 0.085

0.1 10

V

µA 1 100

nA

Ω

Semiconductor Group

2 01/97

BUZ 21 L

Electrical Characteristics,

Parameter

Dynamic Characteristics

Transconductance

≥

2

V

DS

I

*

D * RDS(on)max, ID

Input capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Output capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Reverse transfer capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Turn-on delay time

V R

DD GS

= 30 V, = 50

Ω

V

GS

= 5 V,

= 3 A

I

D

= 25°C, unless otherwise specified

at

T

j

Symbol Values Unit

min. typ. max.

g

fs

= 10.5 A

C

iss

8 14 -

- 1200 1500

C

oss

- 320 580

C

rss

- 160 260

t

d(on)

- 25 40

S

pF

ns

Rise time

V R

DD GS

= 30 V, = 50

Ω

V

GS

= 5 V,

Turn-off delay time

V R

DD GS

= 30 V, = 50

Ω

V

GS

= 5 V,

Fall time

V R

DD GS

= 30 V, = 50

Ω

V

GS

= 5 V,

= 3 A

I

D

= 3 A

I

D

= 3 A

I

D

t

r

t

d(off)

t

f

- 110 170

- 210 270

- 100 130

Semiconductor Group

3 01/97