Siemens BUZ21 Datasheet

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

BUZ 21

Pin 1 Pin 2 Pin 3

G D S

Type

V

DS

I

D

R

DS(on

)

Package Ordering Code

BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2

Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current

T

= 25 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche current,limited by

T

jmax

Avalanche energy,periodic limited by
Avalanche energy, single pulse

I

= 21 A,

D

L

= 340 µH,

V

DD

T

= 25 V,

= 25 °C

j

R

GS

= 25 Ω

Gate source voltage
Power dissipation

T

jmax

I

D

I

Dpuls

I

AR

E

AR

E

AS

V

GS

P

tot

A

21

84
21
11 mJ

100

±

20 V

W

T

= 25 °C

C

Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient

T
T
R
R

j
stg

thJC
thJA

75

-55 ... + 150 °C

-55 ... + 150
≤ 1.67 K/W

75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 01/97

BUZ 21

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V
V

DS
DS

= 100 V,
= 100 V,

V
V

GS
GS

= 0 V,
= 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

100 - -

2.1 3 4

-

-

0.1
10

1
100

- 10 100

V

µA

nA

Drain-Source on-resistance

V

= 10 V,

GS

I

= 13 A

D

R

DS(on)

Ω

- 0.065 0.085

Semiconductor Group 2 01/97

BUZ 21

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 13 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V

= 30 V,

DD

V

GS

= 10 V,

I

= 3 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

8 11 -

pF

- 1000 1300

- 300 530

- 150 240
ns

R

GS

= 50

Ω

Rise time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Fall time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 3 A

D

I

= 3 A

D

I

= 3 A

D

t

r

t

d(off)

t

f

- 25 40

- 50 75

- 160 210

- 80 110

Semiconductor Group 3 01/97