Siemens BUZ205 Datasheet
SIPMOS® Power Transistor BUZ 205
● N channel
● Enhancement mode
● FREDFET
Type V
DS
I
D
R
DS (on)
Package
1)
Ordering Code
BUZ 205 400 V 6.0 A 1.0 Ω TO-220 AB C67078-A1401-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current,
Pulsed drain current,
Drain-source voltage
Drain-gate voltage,
R
Gate-source voltage
Power dissipation,
T
Operating and storage temperature range
Thermal resistance, chip-case R
T
= 35 ˚C I
C
T
= 25 ˚C I
C
= 20 kΩ V
GS
= 25 ˚C P
C
D
D puls
V
V
T
j
DS
DGR
GS
tot
, T
th JC
stg
6.0 A
24
400 V
400
± 20
75 W
– 55 ... + 150 ˚C
≤ 1.67 K/W
DIN humidity category, DIN 40 040 E –
IEC climatic category, DIN IEC 68-1 55/150/56
1) See chapter Package Outlines.
Semiconductor Group 508
BUZ 205
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static characteristics
Drain-source breakdown voltage
V
= 0 V, ID = 0.25 mA
GS
Gate threshold voltage
V
= VDS, ID = 1 mA
GS
Zero gate voltage drain current
V
= 400 V, VGS = 0 V
DS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V, VDS = 0 V
GS
Drain-source on-resistance
V
= 10 V, ID = 4.0 A
GS
Dynamic characteristics
Forward transconductance
V
≥ 2 x ID x R
DS
DS(on)max
, ID = 4.0 A
Input capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
t
Turn-on time
V
= – 30 V, VGS = 10 V, ID = 2.7 A, RGS=50Ω
DD
Turn-off time
V
= – 30 V, VGS = 10 V, ID = 2.7 A, RGS=50Ω
DD
, (ton = t
on
t
, (t
off
off
= t
d (on)
d (off)
+ tr)
+ tf)
V
(BR) DSS
V
GS (th)
I
DSS
I
GSS
R
DS (on)
g
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
400 – – V
2.1 4.0 4.0
µA
–
–
20
100
250
1000
– 10 100 nA
– 0.9 1.0 Ω
1.7 2.9 – S
– 1500 2000 pF
– 120 180
–3560
– 3045ns
–4060
– 110 140
–5065
Semiconductor Group 509
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