Siemens BUZ110S Datasheet
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
BUZ 110 S
SPP80N05
Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on
BUZ 110 S 55 V 80 A 0.012
)
Ω
Package Ordering Code
TO-220 AB Q67040-S4005-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche energy, single pulse
I
= 80 A, VDD = 25 V, RGS = 25
D
L = 144 µH, T
= 25 °C
j
Avalanche current,limited by T
Ω
jmax
Avalanche energy,periodic limited by T
Reverse diode dv/dt
jmax
I
D
I
Dpuls
E
AS
I
AR
E
AR
dv/dt
A
80
66
320
mJ
460
80 A
20 mJ
kV/µs
I
= 80 A, VDS = 40 V, diF/dt = 200 A/µs
S
T
= 175 °C
jmax
Gate source voltage V
Power dissipation
T
= 25 °C
C
Semiconductor Group 1 28/Jan/1998
GS
P
tot
6
±
20 V
200
W
BUZ 110 S
SPP80N05
Maximum Ratings
Parameter Symbol Values Unit
Operating temperature T
Storage temperature T
Thermal resistance, junction - case R
Thermal resistance, junction - ambient R
j
stg
thJC
thJA
-55 ... + 175 °C
-55 ... + 175
≤
0.75 K/W
≤
62
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Electrical Characteristics,
Parameter Symbol Values Unit
Static Characteristics
Drain- source breakdown voltage
V
= 0 V, ID = 0.25 mA, Tj = 25 °C
GS
Gate threshold voltage
V
GS=VDS, ID
= 200 µA
Zero gate voltage drain current
V
= 50 V, VGS = 0 V, Tj = -40 °C
DS
V
= 50 V, VGS = 0 V, Tj = 25 °C
DS
V
= 50 V, VGS = 0 V, Tj = 150 °C
DS
Gate-source leakage current
V
= 20 V, VDS = 0 V
GS
Drain-Source on-resistance
V
= 10 V, ID = 66 A
GS
at Tj = 25°C, unless otherwise specified
min. typ. max.
V
(BR)DSS
55 - -
V
GS(th)
2.1 3 4
I
DSS
-
-
-
I
GSS
- 10 100
R
DS(on)
- 0.009 0.012
-
0.1
-
V
µA
0.1
1
100
nA
Ω
Semiconductor Group 2 28/Jan/1998
BUZ 110 S
SPP80N05
Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
* ID * RDS(on)max, ID
= 66 A
Input capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Turn-on delay time
V
= 30 V, VGS = 10 V, ID = 80 A
DD
= 3.9
Ω
R
G
Rise time
V
= 30 V, VGS = 10 V, ID = 80 A
DD
= 3.9
Ω
R
G
Turn-off delay time
V
= 30 V, VGS = 10 V, ID = 80 A
DD
= 3.9
Ω
R
G
Fall time
V
= 30 V, VGS = 10 V, ID = 80 A
DD
= 3.9
Ω
R
G
Gate charge at threshold
V
= 40 V, ID ≥ 0.1 A, VGS =0 to 1 V
DD
Gate charge at 7.0 V
V
= 40 V, ID = 80 A, VGS =0 to 7 V
DD
Gate charge total
V
= 40 V, ID = 80 A, VGS =0 to 10 V
DD
Gate plateau voltage
V
= 40 V, ID = 80 A
DD
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(th)
Q
g(7)
Q
g(total)
V
(plateau)
S
30 - -
pF
- 2420 3025
- 745 930
- 380 475
ns
- 20 30
- 35 55
- 45 70
- 30 45
nC
- 3 4.5
- 65 100
- 85 130
V
- 5.8 -
Semiconductor Group 3 28/Jan/1998
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