Siemens BUZ104SL-4 Datasheet
®
SIPMOS
Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
v/dt
• d
rated
BUZ 104SL-4
Preliminary data
Type
V
DS
I
D
R
DS(on)
BUZ 104SL-4 55 V 3.2 A 0.125
Maximum Ratings
Parameter
Continuous drain current
= 25 °C
T
A
Pulsed drain current
= 25 °C
T
A
one channel active
one channel active
Avalanche energy, single pulse
I
= 3.2 A,
D
L
= 10.15 mH,
V
DD
= 25 V,
T
= 25 °C
j
Reverse diode dv/d
= 3.2 A,
I
S
V
DS
= 40 V, d
R
= 25
GS
t
i
/dt = 200 A/µs
F
Ω
Ω
Package Ordering Code
P-DSO-28 C67078-S. . . .- . .
Symbol Values Unit
I
D
A
3.2
I
Dpuls
12.8
E
AS
mJ
52
d
v/dt
kV/µs
T
= 175 °C
jmax
Gate source voltage
Power dissipation
T
= 25 °C
A
,one channel active
Operating temperature
Storage temperature
V
GS
P
T
T
tot
j
stg
6
±
14
2.4
-55 ... + 175 °C
-55 ... + 175
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Semiconductor Group
1 07/Oct/1997
V
W
Thermal Characteristics
BUZ 104SL-4
Preliminary data
Parameter
Symbol Values Unit
min. typ. max.
Thermal resistance, junction - soldering point
Thermal resistance, junction - ambient
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for
Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics,
= 25°C, unless otherwise specified
at
T
j
2)
1)
R
R
thJS
thJA
- - tbd K/W
- - 62.5
Parameter
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
= 0.25 mA,
I
D
= 25 °C
T
j
Gate threshold voltage
V
GS
=
V
DS, ID
= 20 µA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= 55 V,
= 55 V,
= 55 V,
V
V
V
= 0 V,
GS
= 0 V,
GS
= 0 V,
GS
= -40 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
Symbol Values Unit
min. typ. max.
V
(BR)DSS
V
55 - -
V
GS(th)
1.2 1.6 2
I
DSS
I
GSS
-
-
-
-
0.1
-
0.1
1
100
µA
nA
- 10 100
R
DS(on)
Ω
= 5 V,
V
GS
Semiconductor Group
= 3.2 A
I
D
- 0.095 0.125
2 07/Oct/1997
Preliminary data
BUZ 104SL-4
Electrical Characteristics,
Parameter
Dynamic Characteristics
Transconductance
≥
2
V
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Output capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Reverse transfer capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Turn-on delay time
V
R
DD
G
= 30 V,
= 16.8
Ω
V
= 5 V,
GS
= 3.2 A
I
D
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
g
fs
= 3.2 A
C
iss
3 --
- 320 400
C
oss
- 100 125
C
rss
- 55 70
t
d(on)
- 20 30
S
pF
ns
Rise time
V
R
DD
G
= 30 V,
= 16.8
Ω
V
= 5 V,
GS
Turn-off delay time
V
R
DD
G
= 30 V,
= 16.8
Ω
V
= 5 V,
GS
Fall time
V
R
DD
G
= 30 V,
= 16.8
Ω
V
= 5 V,
GS
Gate charge at threshold
V
DD
= 40 V,
≥ 0.1 A,
I
D
Gate charge at 5.0 V
V
DD
= 40 V,
= 3.2 A,
I
D
Gate charge total
V
DD
= 40 V,
= 3.2 A,
I
D
= 3.2 A
I
D
= 3.2 A
I
D
= 3.2 A
I
D
=0 to 1 V
V
GS
=0 to 5 V
V
GS
=0 to 10 V
V
GS
t
r
t
d(off)
t
f
Q
g(th)
Q
g(5)
Q
g(total)
- 30 45
- 35 53
- 20 30
nC
- 0.55 0.85
- 5.3 8
- 14 21
Gate plateau voltage
= 40 V,
V
DD
Semiconductor Group
= 3.2 A
I
D
V
(plateau)
V
- 3.27 -
3 07/Oct/1997
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