Siemens BUZ104L Datasheet
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
• dv/dt rated
• Low on-resistance
BUZ 104L
• 175 °C operating temperature
• also in TO-220 SMD available
Type
V
DS
I
D
R
DS(on)
Package Ordering Code
Pin 1 Pin 2 Pin 3
G D S
BUZ 104L 50 V 17.5 A 0.1 Ω TO-220 AB C67078-S1358-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 29 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche energy, single pulse
I
D
I
Dpuls
E
AS
A
17.5
70
mJ
I
= 17.5 A,
D
L
= 114 µH,
Reverse diode dv/d
I
= 17.5 A,
S
T
= 175 °C
jmax
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
= 25 °C
C
Semiconductor Group 1 07/96
V
= 25 V,
DD
T
= 25 °C
j
V
= 40 V, d
DS
R
= 25 Ω
GS
35
t
i
/dt = 200 A/µs
F
dv/d
t
kV/µs
6
V
V
P
GS
gs
tot
±
14 V
±
20
W
60
BUZ 104L
Maximum Ratings
Parameter Symbol Values Unit
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
T
T
R
R
j
stg
thJC
thJA
-55 ... + 175 °C
-55 ... + 175
≤ 2.5 K/W
≤
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
V
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= -40 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= 50 V,
= 50 V,
= 50 V,
V
V
V
GS
GS
GS
= 0 V,
= 0 V,
= 0 V,
T
= 25 °C
j
T
= -40 °C
j
T
= 150 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-resistance
V
= 5 V,
GS
I
= 8.5 A
D
V
GS(th)
I
DSS
I
GSS
R
DS(on)
50 - -
1.2 1.6 2
-
-
-
0.1
1
10
1 µA
100
100
- 10 100
- 0.085 0.1
nA
µA
nA
Ω
Semiconductor Group 2 07/96
BUZ 104L
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 8.5 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
= 5 V,
GS
I
= 3 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
5 9.2 -
pF
- 420 560
- 140 210
- 60 90
ns
R
GS
= 50
Ω
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
Fall time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
= 3 A
D
I
= 3 A
D
I
= 3 A
D
t
r
t
d(off)
t
f
- 12 18
- 50 75
- 70 95
- 50 65
Semiconductor Group 3 07/96
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