Siemens BUZ101S Datasheet
Preliminary data
BUZ 101 S
SPP22N05
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
v/dt
rated
• d
• 175°C operating temperature
Type
V
DS
I
D
R
DS(on
BUZ 101 S 55 V 22 A 0.06
Maximum Ratings
Ω
Pin 1 Pin 2 Pin 3
G D S
)
Package Ordering Code
TO-220 AB Q67040-S4013-A2
Parameter
Continuous drain current
= 25 °C
T
C
= 100 °C
T
C
Pulsed drain current
= 25 °C
T
C
Avalanche energy, single pulse
T
Ω
jmax
= 22 A,
I
D
= 372 µH,
L
V
DD
T
= 25 V,
= 25 °C
j
R
GS
Avalanche current,limited by
= 25
Avalanche energy,periodic limited by
Reverse diode dv/d
= 22 A,
I
S
T
jmax
V
DS
= 175 °C
t
= 40 V, d
/dt = 200 A/µs
i
F
Gate source voltage
Power dissipation
= 25 °C
T
C
T
jmax
Symbol Values Unit
I
D
A
22
16
I
Dpuls
88
E
AS
mJ
90
I
E
d
AR
AR
v/dt
22 A
5.5 mJ
kV/µs
6
V
P
GS
tot
±
20
V
W
55
Semiconductor Group
1 04/Nov/1997
Maximum Ratings
Preliminary data
BUZ 101 S
SPP22N05
Parameter
Operating temperature
Storage temperature
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Symbol Values Unit
T
T
R
R
j
stg
thJC
thJA
-55 ... + 175 °C
-55 ... + 175
≤
2.7
≤
62
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
= 0.25 mA,
I
D
= 25 °C
T
j
Gate threshold voltage
V
GS
=
V
DS, ID
= 40 µA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= 50 V,
= 50 V,
= 50 V,
V
V
V
= 0 V,
GS
= 0 V,
GS
= 0 V,
GS
= -40 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
GS
= 10 V,
= 16 A
I
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
55 - -
2.1 3 4
-
-
-
-
0.1
-
0.1
1
100
- 10 100
- 0.04 0.06
K/W
V
µA
nA
Ω
Semiconductor Group
2 04/Nov/1997
Preliminary data
BUZ 101 S
SPP22N05
Electrical Characteristics,
Parameter
Dynamic Characteristics
Transconductance
≥
2
V
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Output capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Reverse transfer capacitance
V
GS
= 0 V,
= 25 V, f = 1 MHz
V
DS
Turn-on delay time
V
R
DD
G
= 30 V,
= 19.6
Ω
V
GS
= 10 V,
I
D
Rise time
V
R
DD
G
= 30 V,
= 19.6
Ω
V
GS
= 10 V,
I
D
Turn-off delay time
V
R
DD
G
= 30 V,
= 19.6
Ω
V
GS
= 10 V,
I
D
Fall time
V
R
DD
G
= 30 V,
= 19.6
Ω
V
GS
= 10 V,
I
D
Gate charge at threshold
V
DD
= 40 V,
= 0.1 A,
I
D
V
GS
Gate charge at 7.0 V
V
DD
= 40 V,
= 22 A,
I
D
V
GS
Gate charge total
V
DD
= 40 V,
= 22 A,
I
D
V
GS
Gate plateau voltage
V
DD
= 40 V,
= 22 A
I
D
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
g
fs
= 16 A
C
iss
7 --
- 490 615
C
oss
- 170 215
C
rss
- 95 120
t
d(on)
= 22 A
- 10 15
t
r
= 22 A
- 25 38
t
d(off)
= 22 A
- 20 30
t
f
= 22 A
- 20 30
Q
g(th)
=0 to 1 V
=0 to 7 V
=0 to 10 V
Q
g(7)
Q
g(total)
V
(plateau)
- 0.5 0.75
- 13 20
- 17 26
- 5.9 -
S
pF
ns
nC
V
Semiconductor Group
3 04/Nov/1997
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