Siemens BUZ101 Datasheet

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• dv/dt rated

• Low on-resistance

• 175°C operating temperature

BUZ 101

• also in TO-220 SMD available

Pin 1 Pin 2 Pin 3

G D S

Type

BUZ 101 50 V 29 A 0.06

V

DS

I

D

R

DS(on)

Ω

Package Ordering Code

TO-220 AB C67078-S1350-A2

Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current

T

= 31 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= 29 A,

D

L

= 83 µH,

Reverse diode dv/d

V

= 25 V,

DD

T

= 25 °C

j

R

= 25

GS

t

Ω

I

D

I

Dpuls

E

AS

dv/d

A

29

116

mJ

70

t

kV/µs

I

= 29 A,

S

T

jmax

Gate source voltage
Power dissipation

T

= 25 °C

C

Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient

V

DS

= 175 °C

= 40 V, d

i

/dt = 200 A/µs

F

V
P

T
T
R
R

GS
tot

j
stg

thJC
thJA

6

±

20 V

W

100

-55 ... + 175 °C

-55 ... + 175

≤

1.5 K/W

≤ 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 175 / 56

Semiconductor Group 1 07/96

BUZ 101

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= -40 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V
V
V

DS
DS
DS

= 50 V,
= 50 V,
= 50 V,

V
V
V

GS
GS
GS

= 0 V,
= 0 V,
= 0 V,

T

= 25 °C

j

T

= -40 °C

j

T

= 150 °C

j

Gate-source leakage current

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

50 - -

2.1 3 4

-

-

-

0.1
1
10

1 µA
100
100

V

nA
µA
nA

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-resistance

V

= 10 V,

GS

I

= 21 A

D

R

DS(on)

- 10 100

Ω

- 0.036 0.06

Semiconductor Group 2 07/96

BUZ 101

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 21 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V

= 30 V,

DD

V

GS

= 10 V,

I

= 3 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

7 13.5 -

pF

- 680 900

- 240 360

- 90 135
ns

R

GS

= 50

Ω

Rise time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Fall time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 3 A

D

I

= 3 A

D

I

= 3 A

D

t

r

t

d(off)

t

f

- 15 23

- 55 85

- 100 135

- 70 95

Semiconductor Group 3 07/96