Siemens BUP603D Datasheet
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
BUP 603D
• Including fast free-wheel diode
Pin 1 Pin 2 Pin 3
G C E
Type
V
CE
I
C
Package Ordering Code
BUP 603D 600V 42A TO-218 AB Q67040-A4230-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-gate voltage
R
= 20 kΩ
GE
Gate-emitter voltage
DC collector current, (limited by bond wire)
T
= 60 °C
C
T
= 90 °C
C
Pulsed collector current,
t
= 1 ms
p
V
CE
V
CGR
V
GE
I
C
I
Cpuls
600 V
600
± 20
A
42
32
T
= 25 °C
C
T
= 90 °C
C
Diode forward current
T
= 90 °C
C
Pulsed diode current,
T
= 25 °C
C
t
= 1 ms
p
Power dissipation
T
= 25 °C
C
Chip or operating temperature
Storage temperature
Semiconductor Group
104
64
I
F
31
I
Fpuls
180
P
tot
W
200
T
j
T
stg
- 55 ... + 150 °C
- 55 ... + 150
1 Dec-02-1996
BUP 603D
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
R
thJC
R
thJCD
≤
0.63 K/W
1
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
=
GE
V
CE, IC
= 0.7 mA,
T
= 25 °C
j
Collector-emitter saturation voltage
V
V
V
V
GE
GE
GE
GE
= 15 V,
= 15 V,
= 15 V,
= 15 V,
I
= 30 A,
C
I
= 30 A,
C
I
= 60 A,
C
I
= 60 A,
C
T
= 25 °C
j
T
= 125 °C
j
T
= 25 °C
j
T
= 125 °C
j
Zero gate voltage collector current
V
GE(th)
V
CE(sat)
I
CES
4.5 5.5 6.5
-
-
-
-
2.1
2.2
3
3.3
2.7
2.8
-
-
V
µA
V
= 600 V,
CE
V
= 0 V,
GE
T
= 25 °C
j
Gate-emitter leakage current
V
= 25 V,
GE
V
CE
= 0 V
AC Characteristics
Transconductance
V
= 20 V,
CE
I
= 30 A
C
Input capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Output capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Reverse transfer capacitance
V
= 25 V,
CE
Semiconductor Group
V
= 0 V, f = 1 MHz
GE
- - 300
I
GES
nA
- - 100
g
fs
S
6 - -
C
iss
pF
- 1600 2150
C
oss
- 170 260
C
rss
- 100 150
2 Dec-02-1996
BUP 603D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
Turn-on delay time
V
R
CC
Gon
= 300 V,
= 33 Ω
V
GE
Rise time
V
R
CC
Gon
= 300 V,
= 33
Ω
V
GE
Turn-off delay time
V
R
CC
Goff
= 300 V,
= 33
Ω
V
GE
Fall time
V
R
CC
Goff
= 300 V,
= 33
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
I
= 30 A
C
I
= 30 A
C
I
= 30 A
C
I
= 30 A
C
t
d(on)
t
r
t
d(off)
t
f
Free-Wheel Diode
T
= 125 °C
j
- 50 75
- 80 120
- 250 340
- 500 700
ns
Diode forward voltage
I
= 20 A,
F
I
= 20 A,
F
V
V
GE
GE
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
Reverse recovery time
I
= 20 A,
F
d
iF/dt = -300 A/µs,
V
= -300 V,
R
V
T
= 25 °C
j
Reverse recovery charge
I
= 20 A,
F
d
iF/dt = -300 A/µs
T
= 25 °C
j
T
= 125 °C
j
V
= -300 V,
R
V
GE
GE
= 0 V
= 0 V
V
t
Q
F
-
-
rr
1.8
1.6
-
-
V
ns
- 110 160
rr
-
-
0.6
1.3
1.1
2.4
µC
Semiconductor Group
3 Dec-02-1996
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