Siemens BUP410D Datasheet
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
BUP 410D
• Including fast free-wheel diode
Pin 1
Pin 2 Pin 3
G C E
Type
V
CE
I
C
Package Ordering Code
BUP 410D 600V 13A TO-220 AB Q67040-A4425-A2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 90 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 90 °C
C
t
= 1 ms
p
Diode forward current
T
= 90 °C
C
Pulsed diode current,
T
= 25 °C
C
t
= 1 ms
p
Power dissipation
T
= 25 °C
C
Chip or operating temperature
Storage temperature
Symbol Values Unit
V
V
CE
CGR
600 V
600
V
I
GE
C
± 20
A
13
8
I
Cpuls
26
16
I
F
11
I
Fpuls
72
P
tot
W
50
T
j
T
stg
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1 Dec-12-1996
Maximum Ratings
BUP 410D
Parameter
Symbol Values Unit
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
≤
Thermal resistance, chip case
Diode thermal resistance, chip case
Electrical Characteristics
= 25 °C, unless otherwise specified
, at T
j
Parameter
R
thJC
R
thJC
D
Symbol Values Unit
2.5
3.1
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 0.35 mA,
= 25 °C
T
j
Collector-emitter saturation voltage
V
V
V
V
GE
GE
GE
GE
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 6 A,
I
C
= 6 A,
I
C
= 12 A,
I
C
= 12 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
V
CE
= 600 V,
V
GE
= 0 V,
= 25 °C
T
j
Gate-emitter leakage current
V
GE
= 25 V,
V
CE
= 0 V
V
GE(th)
V
CE(sat)
I
CES
I
GES
4.5 5.5 6.5
-
-
-
-
2.1
2.2
3
3.3
2.7
2.8
-
-
- - 80
- - 100
K/W
V
µA
nA
Semiconductor Group
2 Dec-12-1996
AC Characteristics
BUP 410D
Transconductance
V
CE
= 20 V,
= 6 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
= 25 V,
V
CE
Electrical Characteristics
= 0 V, f = 1 MHz
V
GE
, at T
Parameter
= 25 °C, unless otherwise specified
j
g
fs
C
iss
C
oss
C
rss
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 300 V,
V
R
CC
Gon
= 100
Ω
V
GE
Rise time
= 300 V,
V
R
CC
Gon
= 100
Ω
V
GE
Turn-off delay time
= 300 V,
V
R
CC
Goff
= 100
Ω
V
GE
Fall time
= 300 V,
V
R
CC
Goff
= 100
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 6 A
I
C
= 6 A
I
C
I
C
I
C
= 6 A
= 6 A
t
d(on)
t
r
t
d(off)
t
f
2 - -
- 320 430
- 40 60
- 25 40
min. typ. max.
T
= 125 °C
j
- 20 35
- 60 90
- 175 240
- 160 220
S
pF
ns
Semiconductor Group
3 Dec-12-1996
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