Siemens BTS 770 G Technical data
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TrilithIC BTS 770 G
Overview
Features
• Quad switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Ultra low
R
High-side switch: typ.165 mΩ,
Low-side switch: typ. 55 mΩ
• Very high peak current capability
DS ON
@25°C:
P-DSO-28-9
• Very low quiescent current
• Space- and thermal optimized power P-DSO-Package
• Load and GND-short-circuit-protected
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Short-circuit detection and diagnosis
• Open-load detection and diagnosis
• C-MOS compatible inputs
• Internal clamp diodes
• Isolated sources for external current sensing
• Over- and under-voltage detection with hysteresis
Type Ordering Code Package
BTS 770 G Q67007-A9254 P-DSO-28-9
Description
The BTS 770 G is a TrilithIC contains one double high-side switch and two low-side
switches in one P-DSO-28-9 -Package.
“Silicon instead of heatsink”
becomes true
The ultra low
R
of this device avoids powerdissipation. It saves costs in mechanical
DS ON
construction and mounting and increases the efficiency.
®
The high-side switches are produced in the SIEMENS SMART SIPMOS
technology. It
is fully protected and contains the signal conditioning circuitry for diagnosis. (The
comparable standard high-side product is the BTS 611L1.)
Semiconductor Group 1 1999-01-07
BTS 770 G
For minimized R
the two low-side switches are produced in the SIEMENS Millifet
DS ON
logic level technology (The comparable standard product is the BUZ 101AL).
Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9
pin configuration). The sources of all four power transistors are connected to separate
pins.
So the BTS 770 G can be used in H-Bridge configuration as well as in any other switch
configuration.
Moreover, it is possible to add current sense resistors.
All these features open a broad range of automotive and industrial applications.
Semiconductor Group 2 1999-01-07
BTS 770 G
DL1
GL1
DL1
N.C.
DHVS
GND
GH1
ST
GH2
DHVS
N.C.
DL2
1
2
3
425
5
6
7
8
9
10
11
12
LS-Lead Frame 1
HS-Lead Frame
LS-Lead Frame 2
28
27
26
24
23
22
21
20
19
18
17
DL1
SL1
SL1
DL1
DHVS
SH1
SH1
SH2
SH2
DHVS
DL2
SL2
GL2
DL2
13
14
AEP02071
16
15
SL2
DL2
Figure 1 Pin Configuration (top view)
Semiconductor Group 3 1999-01-07
BTS 770 G
Pin Definitions and Functions
Pin No. Symbol Function
1, 3, 25, 28 DL1 Drain of low-side switch1
Leadframe 1
2 GL1 Gate of low-side switch1
4 N.C. not connected
5, 10, 19, 24 DHVS Drain of high-side switches and power supply voltage
Leadframe 2
6 GND Ground
7 GH1 Gate of high-side switch1
8 ST Status of high-side switches; open Drain output
9 GH2 Gate of high-side switch2
1)
1)
11 N.C. not connected
12, 14, 15, 18 DL2 Drain of low-side switch2
Leadframe 3
1)
13 GL2 Gate of low-side switch2
16, 17 SL2 Source of low-side switch2
20, 21 SH2 Source of high-side switch2
22, 23 SH1 Source of high-side switch1
26, 27 SL1 Source of low-side switch1
1)
To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe.
Bold type: Pin needs power wiring
Semiconductor Group 4 1999-01-07
ST
BTS 770 G
DHVS
2419,10,5,
8
GH1
GH2
GND
GL1
GL2
7
9
6
2
13
DST
C6V1
R
I1
3.5 kΩ
R
I2
Diagnosis
Biasing and Protection
Driver
IN OUT
1212
DI1
00
C6V1
0
1
Ωk3.5
LL
1
HL
0
LH
11
HH
DI2
C6V1
R
O1
10 kΩ Ωk10
R
O2
2120,
1815,14,12,
22, 23
25, 283,1,
SH2
DL2
SH1
DL1
26, 16,27 17
SL1 SL2
AEB02072
Figure 2 Block Diagram
Semiconductor Group 5 1999-01-07
BTS 770 G
Circuit Description
Input Circuit
The control inputs GH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with
hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into
the necessary form for driving the power output stages.
The inputs GH1 and GH2 are connected to a standard N-channel logic level power-MOS
gate.
Output Stages
The output stages consist of an ultra low
R
Power-MOS H-Bridge. Protective circuits
DS ON
make the outputs short circuit proof to ground and load short circuit proof. Positive and
negative voltage spikes, which occur when driving inductive loads, are limited by
integrated power clamp diodes.
Short Circuit Protection (valid only for the high-side switches)
The outputs are protected against
– output short circuit to ground, and
– overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage of the HS-Switches by
comparing the DS-Voltage-Drop with an internal reference voltage. Above this trippoint
the OP-Amp reduces the output current depending on the junction temperature and the
drop voltage.
In the case of overloaded high-side switches the status output is set to low.
R
If the HS-Switches are in OFF-state-Condition internal resistors
from SH1,2 to GND
O1,2
pull the voltage at SH1,2 to low values. On each output pin SH1 and SH2 an output
examiner circuit compares the output voltages with the internal reference voltage VEO.
This results in switching the status output to low. In H-Bridge condition this feature can
be used to protect the low-side switches against short circuit during the OFF-period.
Overtemperature Protection (valid only for the high-side-switches)
The chip also incorporates an overtemperature protection circuit with hysteresis which
switches off the output transistors and sets the status output to low.
Undervoltage-Lockout (UVLO)
V
When
reaches the switch-on voltage V
S
The High-Side output transistors are switched off if the supply voltage
the switch off value
Semiconductor Group 6 1999-01-07
V
UVOFF
.
the IC becomes active with a hysteresis.
UVON
V
drops below
S
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