Siemens BTS 728 L2 Technical data

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PROFET® BTS 728 L2

Smart High-Side Power Switch

Two Channels: 2 x 60mΩ

Status Feedback

Product Summary				Package
Operating Voltage	Vbb(on)		4.75...41V	P-DSO-20-9
	Active channels	one	two parallel
On-state Resistance	RON	60mΩ	30mΩ
Nominal load current	IL(NOM)	4.0A	6.0A
Current limitation	IL(SCr)	17A	17A

General Description

∙N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.

∙Fully protected by embedded protection functions

Applications

∙µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads

∙All types of resistive, inductive and capacitve loads

∙Most suitable for loads with high inrush currents, so as lamps

∙Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

∙Very low standby current

∙CMOS compatible input

∙Improved electromagnetic compatibility (EMC)

∙Fast demagnetization of inductive loads

∙Stable behaviour at undervoltage

∙Wide operating voltage range

∙Logic ground independent from load ground

Protection Functions

Block Diagram

	∙	Short circuit protection		Vbb
	∙	Overload protection
	∙	Current limitation
	∙	Thermal shutdown
	∙	Overvoltage protection (including load dump) with external	IN1	Logic
	∙	resistor	ST1	Channel
		Reverse battery protection with external resistor		1	OUT 1
	∙ Loss of ground and loss of Vbb protection
	∙	Electrostatic discharge protection (ESD)	IN2	Logic	Load 1
	Diagnostic Function		ST2	Channel
				2	OUT 2
	∙	Diagnostic feedback with open drain output		PROFET
	∙	Open load detection in ON-state		GND	Load 2
	∙ Feedback of thermal shutdown in ON-state

Semiconductor Group

Page 1 of 14

1999-Mar-23

BTS 728 L2

Functional diagram

overvoltage		gate	current limit	VBB
protection		control
		+
internal	logic	charge	clamp for
voltage supply		pump
			inductive load
				OUT1
IN1		temperature
		sensor
ESD
				LOAD
		Open load
ST1
		detection
GND1

Channel 1

	IN2	Control and protection circuit
	ST2	of
		channel 2
	GND2	OUT2

PROFET

Pin Definitions and Functions

Pin	Symbol	Function
1,10,	Vbb	Positive power supply voltage. Design the
11,12,		wiring for the simultaneous max. short circuit
15,16,		currents from channel 1 to 2 and also for low
19,20		thermal resistance
3	IN1	Input 1,2, activates channel 1,2 in case of
7	IN2	logic high signal
17,18	OUT1	Output 1,2, protected high-side power output
13,14	OUT2	of channel 1,2. Design the wiring for the max.
		short circuit current
4	ST1	Diagnostic feedback 1,2 of channel 1,2,
8	ST2	open drain, low on failure
2	GND1	Ground 1 of chip 1 (channel 1)
6	GND2	Ground 2 of chip 2 (channel 2)
5,9	N.C.	Not Connected

Pin configuration

(top view)

			∙
Vbb		1		20				Vbb
GND1		2		19				Vbb
IN1		3		18				OUT1
ST1		4		17				OUT1
N.C.		5		16				Vbb
GND2		6		15				Vbb
IN2		7		14				OUT2
ST2		8		13				OUT2
N.C.		9		12				Vbb
Vbb		10					11	Vbb

Semiconductor Group

Page 2

1999-Mar-23

BTS 728 L2

Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter	Symbol			Values		Unit
Supply voltage (overvoltage protection see page 4)	Vbb		43			V
Supply voltage for full short circuit protection	Vbb		24			V
Tj,start = -40 ...+150°C

Load current (Short-circuit current, see page 5)

Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2) = 2 Ω, td = 200 ms; IN = low or high,

each channel loaded with RL = 8.0 Ω,

IL	self-limited	A
VLoad dump3)	60	V

Operating temperature range

Tj

-40 ...+150

°C

Storage temperature range

Tstg

-55 ...+150

Power dissipation (DC)4)

Ta = 25°C:

Ptot

3.7

W

(all channels active)

Ta = 85°C:

1.9

Maximal switchable inductance, single pulse

Vbb = 12V, Tj,start = 150°C 4),

IL = 4.0 A, EAS = 220 mJ, 0 Ω

one channel:

ZL

19.9

mH

IL = 6.0 A, EAS = 540 mJ, 0 Ω

two parallel channels:

22.3

see diagrams on page 9

Electrostatic discharge capability (ESD)

IN:

VESD

1.0

kV

(Human Body Model)

ST:

4.0

out to all other pins shorted:

8.0

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5kΩ; C=100pF

Input voltage (DC)

VIN

-10 ... +16

V

Current through input pin (DC)

IIN

±2.0

mA

Current through status pin (DC)

IST

±5.0

see internal circuit diagram page 8

Thermal Characteristics

Parameter and Conditions

Symbol

Values

Unit

min

typ

Max

Thermal resistance

junction - soldering point4),5)

each channel:

Rthjs

--

--

13.5

K/W

junction - ambient4)

one channel active:

Rthja

--

41

--

all channels active:

--

34

--

1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω resistor for the GND connection is recommended.

2)RI = internal resistance of the load dump test pulse generator

3)VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

	4)	Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm		2	(one layer, 70μm thick) copper area for Vbb
	5)	connection. PCB is vertical without blown air. See page 14
		Soldering point: upper side of solder edge of device pin 15. See page 14
	Semiconductor Group		Page 3		1999-Mar-23

BTS 728 L2

Electrical Characteristics

Parameter and Conditions, each of the two channels											Symbol				Values			Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified													min		typ		Max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A, Vbb ³ 7V												--						mΩ
		each channel,							Tj = 25°C:		RON			50			60
									Tj = 150°C:					100			120
		two parallel channels, Tj = 25°C:												25			30
see diagram, page 10
Nominal load current				one channel active:							IL(NOM)	3.6		4.0			--	A
		two parallel channels active:										5.5		6.0
Device on PCB6), Ta = 85°C, Tj £ 150°C
Output current while GND disconnected or pulled up;											IL(GNDhigh)	--		--			2	mA
Vbb = 30 V, VIN = 0,
see diagram page 8; (not tested specified by design)
Turn-on time7)				IN					to 90% VOUT:		ton	30		100			200	μs
Turn-off time				IN					to 10% VOUT:		toff	30		100			200
RL = 12 Ω
Slew rate on 7)											dV/dton	0.1		--			1	V/μs
10 to 30% VOUT, RL = 12 Ω:
Slew rate off 7)											-dV/dtoff	0.1		--			1	V/μs
70 to 40% VOUT, RL = 12 Ω:
Operating Parameters
Operating voltage									Tj=-40		Vbb(on)	4.75		--			41	V
							Tj=25...150°C:							--			43
Overvoltage protection8)									Tj =-40°C:		Vbb(AZ)	41		--			--	V
I bb = 40 mA							Tj =25...150°C:					43		47			52
Standby current9)							Tj =-40°C...25°C :				Ibb(off)	--		10			18	μA
VIN = 0; see diagram page 10									Tj =150°C:			--		--			50
Leakage output current (included in Ibb(off))											IL(off)	--		1			10	μA
VIN = 0
Operating current 10), VIN = 5V,											IGND	--		0.8			1.5	mA
IGND = IGND1 + IGND2,							one channel on:
							two channels on:					--		1.6			3.0
6)	Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm									2	(one layer, 70mm thick) copper area for Vbb

connection. PCB is vertical without blown air. See page 14

7)	See timing diagram on page 11.

8)Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150W resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 8.

9)	Measured with load; for the whole device; all channels off
10) Add I , if I		ST	> 0
	ST
Semiconductor Group				Page 4	1999-Mar-23

BTS 728 L2

Parameter and Conditions, each of the two channels		Symbol				Values			Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified				min		typ		Max
Protection Functions
Current limit, (see timing diagrams, page 12)
	Tj =-40°C:	IL(lim)						36	A
			21		28
	Tj =25°C:		17		22			31
	Tj =+150°C:		12		16			24
Repetitive short circuit current limit,
Tj = Tjt	each channel	IL(SCr)						--	A
			--		17
two parallel channels			--		17			--
(see timing diagrams, page 12)
Initial short circuit shutdown time	Tj,start =25°C:	toff(SC)	--		2.4			--	ms
(see timing diagrams on page 12)
Output clamp (inductive load switch off)11)									V
at VON(CL) = Vbb - VOUT, IL= 40 mA	Tj =-40°C:	VON(CL)	41		--			--
Tj =25°C...150°C:			43		47			52
Thermal overload trip temperature		Tjt	150		--			--	°C
Thermal hysteresis		Tjt	--		10			--	K
Reverse Battery
Reverse battery voltage 12)		-Vbb	--		--			32	V
Drain-source diode voltage (Vout > Vbb)		-VON	--		600			--	mV
IL = - 4.0 A, Tj = +150°C

11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest

VON(CL)

12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

Semiconductor Group

Page 5

1999-Mar-23