siemens bsp318 Datasheet

BSP 318

SIPMOS

®

Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• Avalanche rated

•

V

= 1.2 ...2.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type

V

DS

I

D

R

DS(on)

Package Marking

BSP 318 60 V 2.6 A 0.15 Ω SOT-223 BSP 318

Type Ordering Code Tape and Reel Information

BSP 318 Q67000-S127 E6327

Maximum Ratings Parameter Symbol Values Unit

Continuous drain current

T

= 25 °C

A

DC drain current, pulsed

T

= 25 °C

A

Avalanche energy, single pulse

I

= 2.6 A,

D

L

= 1.38 mH,

V

DD

T

= 25 V,

= 25 °C

j

R

GS

= 25

Ω

Gate source voltage Gate-source peak voltage,aperiodic Power dissipation

T

= 25 °C

A

I

D

I

Dpuls

E

AS

V

GS

V

gs

P

tot

2.6

10.4

8

±

14 V

±

20

1.8

A

mJ

W

Semiconductor Group 1 Sep-12-1996

BSP 318

Maximum Ratings Parameter Symbol Values Unit

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point

T

j

T

stg

R

thJA

1)

R

thJS

-55 ... + 150 °C

-55 ... + 150

≤ 70 K/W ≤

10 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

(BR)DSS

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 60 V, = 60 V,

V V

GS GS

= 0 V, = 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= 5 V,

GS

I

= 2.6 A

D

V

GS(th)

I

DSS

I

GSS

R

DS(on)

60 - -

1.2 1.6 2

-

0.1 10

1 100

- 10 100

- 0.12 0.15

µA

nA

Ω

Semiconductor Group 2 Sep-12-1996

BSP 318

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 2.6 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD

GS

= 30 V,

= 50

Ω

V

= 5 V,

GS

I

= 0.3 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

2.4 5.6 pF

- 580 770

- 180 270

- 70 105 ns

- 12 20

Rise time

V R

DD

GS

= 30 V,

= 50

Ω

V

= 5 V,

GS

Turn-off delay time

V R

DD

GS

= 30 V,

= 50 Ω

V

= 5 V,

GS

Fall time

V R

DD

GS

= 30 V,

= 50 Ω

V

= 5 V,

GS

I

= 0.3 A

D

I

= 0.3 A

D

I

= 0.3 A

D

t

r

t

d(off)

t

f

- 30 45

- 90 120

- 70 95

Semiconductor Group 3 Sep-12-1996

BSP 318

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

A

Inverse diode direct current,pulsed

T

= 25 °C

A

Inverse diode forward voltage

V

= 0 V,

GS

I

= 5.2 A,

F

T

= 25 °C

j

Reverse recovery time

V

= 30 V,

R

=

I

l

d

i

F

/dt = 100 A/µs

S,

F

Reverse recovery charge

V

= 30 V,

R

=

I

l

d

i

F

/dt = 100 A/µs

S,

F

I

V

t

Q

S

SM

SD

rr

A

- - 2.6

- - 10.4 V

- 0.95 1.2 ns

- 40 µC

- 0.04 -

Semiconductor Group 4 Sep-12-1996

BSP 318

Power dissipation

P

= ƒ(

T

tot

P

tot

)

A

2.0

W

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0 20 40 60 80 100 120 °C 160

Drain current

I

= ƒ(

T

D

parameter:

I

D

T

A

)

A

≥

GS

5 V

V

2.8 A

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 20 40 60 80 100 120 °C 160

T

A

Safe operating area parameter :

D

= 0,

T

I

=f(

D

=25°C

C

V

)

DS

Transient thermal impedance

Z

= ƒ(

t

2

1

0

-1

-2

-3

-4

)

p

D = t

single pulse

/

T

p

th JA

parameter:

10

K/W

10

Z

thJC

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-5

10

-8

-7

-6

-5

-4

-3

-2

10

-1

10

10 0 s

t

p

Semiconductor Group 5 Sep-12-1996

BSP 318

Typ. output characteristics

ƒ(

I

=

V

D

parameter:

I

D

)

DS

t

= 80 µs ,

p

6.0

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

l

P

= 2W

tot

k

g

h

e

j

A

f

i

d

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0

T

= 25 °C

j

c

V

b

a

[V]

GS a 2.5

b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0

V

DS

Typ. drain-source on-resistance

R

DS (on)

parameter:

R

DS (on)

ƒ(

=

I

)

D

t

0.45

= 80 µs,

p

T

= 25 °C

j

Ω

0.35

0.30

0.25

0.20

0.15

0.10

V

[V] =

GS

0.05

a

b

c

d

e

f

g

2.5

3.0

3.5

4.0

4.5

5.0

0.00

0.0 0.4 0.8 1.2 1.6 2.0 A 2.6

5.5

6.0

7.0

h

a

b

c

d

e

f

g

h

i

j

k

i

j

9.0

k

10.0

I

D

8.0

Typ. transfer characteristics parameter:

5.5

4.5

I

D

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

t

= 80 µs

p

A

0 1 2 3 4 5 6 7 8 V 10

ID = f(V

GS

)

V

GS

Typ. forward transconductance parameter:

8.0

g

fs

6.0

5.0

4.0

3.0

2.0

1.0

0.0

t

= 80 µs,

p

S

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0

g

= f (

fs

I

)

D

I

D

Semiconductor Group 6 Sep-12-1996

BSP 318

Drain-source on-resistance

R

DS (on)

parameter:

R

DS (on)

= ƒ(

T

)

j

I

0.38

= 2.6 A,

D

V

GS

= 5 V

Ω

0.32

0.28

0.24

0.20

0.16

0.12

0.08

0.04

0.00

-60 -20 20 60 100 °C 160

98%

typ

Gate threshold voltage

V

parameter:

V

GS(th)

T

j

GS (th)

= ƒ(

T

)

j

V

=

V

,

I

GS

4.6 V

4.0

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

-60 -20 20 60 100 °C 160

DS

= 1 mA

D

98% typ 2%

T

j

Typ. capacitances

C = f (V

parameter:

C

)

DS

V

=0V, f = 1 MHz

GS

1

10

nF

0

10

-1

10

-2

10

0 5 10 15 20 25 30 V 40

Forward characteristics of reverse diode

I

= ƒ(

V

F

parameter:

I

F

C

iss

C

oss

C

rss

V

DS

)

SD

Tj, t

= 80 µs

p

2

10

A

1

10

0

10

T

= 25 °C typ

j

T

= 150 °C typ

j

T

= 25 °C (98%)

j

T

= 150 °C (98%)

j

-1

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V

SD

Semiconductor Group

7 Sep-12-1996

BSP 318

Avalanche energy

parameter:

R

= 25 Ω, L = 1.38 mH

GS

E

AS

I

= 2.6 A,

D

9

mJ

7

6

5

4

3

2

1

0

20 40 60 80 100 120 °C 160

E

= ƒ(

T

AS

V

= 25 V

DD

)

j

T

j

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

= ƒ(

T

)

j

71

V

68

66

64

62

60

58

56

54

-60 -20 20 60 100 °C 160

T

j

Safe operating area parameter :

D

= 0.01,

I

D

T

=f(

V

=25°C

C

DS

)

Semiconductor Group 8 Sep-12-1996

Package outlines

BSP 318

SOT-223 Dimensions in mm

Semiconductor Group 9 Sep-12-1996