Siemens BSP170 Datasheet
®
SIPMOS
Small-Signal Transistor
• P channel
• Enhancement mode
• Avalanche rated
BSP 170
• V
Type
BSP 170 -60 V -1.7 A 0.35
= -2.1...-4.0 V
GS(th)
V
DS
I
D
R
DS(on)
Ω
Package Marking
SOT-223
Type Ordering Code Tape and Reel Information
BSP 170 Q67000-S . . . E6327
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
A
DC drain current, pulsed
T
= 25 °C
A
Avalanche energy, single pulse
I
= -1.7 A,
D
L
= 3.23 mH,
V
DD
T
j
= 25 °C
= -25 V,
R
GS
= 25
Gate source voltage
Power dissipation
T
= 25 °C
A
Ω
Symbol Values Unit
I
D
I
Dpuls
E
AS
V
GS
P
tot
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
A
-1.7
-6.8
mJ
8
±
20
V
W
1.8
Semiconductor Group
1 22/05/1997
Maximum Ratings
BSP 170
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Thermal resistance, junction-soldering point
1)
Symbol Values Unit
T
T
R
R
j
stg
thJA
thJS
-55 ... + 150 °C
-55 ... + 150
≤
70
≤
10
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
= -0.25 mA,
I
D
= 25 °C
T
j
Gate threshold voltage
V
GS
V
=
DS, ID
= -1 mA
Zero gate voltage drain current
V
V
DS
DS
= -60 V,
= -60 V,
V
V
= 0 V,
GS
= 0 V,
GS
= 25 °C
T
j
= 125 °C
T
j
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= -10 V,
= -1.7 A
I
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
-60 - -
-2.1 -3 -4
-
-
-0.1
-10
-1
-100
- -10 -100
- 0.255 0.35
K/W
V
µA
nA
Ω
Semiconductor Group
2 22/05/1997
BSP 170
Electrical Characteristics,
Parameter
Dynamic Characteristics
Transconductance
≥
2
V
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
GS
= 0 V,
= -25 V, f = 1 MHz
V
DS
Output capacitance
V
GS
= 0 V,
= -25 V, f = 1 MHz
V
DS
Reverse transfer capacitance
V
GS
= 0 V,
= -25 V, f = 1 MHz
V
DS
Turn-on delay time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
Rise time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
Turn-off delay time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
Fall time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
at
= 25°C, unless otherwise specified
T
j
Symbol Values Unit
min. typ. max.
g
fs
= -1.7 A
C
iss
1 1.35 -
- 800 1100
C
oss
- 250 375
C
rss
- 95 145
t
d(on)
= -0.3 A
I
D
- 25 38
t
r
= -0.3 A
I
D
- 80 120
t
d(off)
= 0.3 A
I
D
- 130 175
t
f
= -0.3 A
I
D
- 150 200
S
pF
ns
Semiconductor Group
3 22/05/1997
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