Siemens BSP135 Datasheet
SIPMOS Small-Signal Transistor BSP 135
● V
● I
D
● R
● N channel
● Depletion mode
● High dynamic resistance
● Available grouped in V
Type Ordering
DS
DS(on)
600 V
0.100 A
60 Ω
Code
GS(th)
Tape and Reel Information Pin Configuration Marking Package
1234
BSP 135 Q62702-S655 E6327: 1000 pcs/reel G D S D BSP 135 SOT-223
BSP 135 Q67000-S283 E6906: 1000 pcs/reel
V
selected in groups:
GS(th)
(see page 219)
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
Drain-gate voltage,
R
= 20 kΩ V
GS
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
Pulsed drain current,
Max. power dissipation,
T
= 44 ˚C I
A
T
= 25 ˚C I
A
T
= 25 ˚C P
A
Operating and storage temperature range
Thermal resistance1)chip-ambient
chip-soldering point R
thJS
V
V
D
D puls
T
j
R
R
DS
DGR
GS
gs
tot
, T
thJA
thJS
stg
600 V
600
± 14
± 20
0.100 A
0.30
1.7 W
– 55 … + 150 ˚C
72
K/W
12
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
Semiconductor Group 1 09.96
BSP 135
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
= − 3 V, ID = 0.25 mA
GS
Gate threshold voltage
V
= 3 V, ID = 1 mA
DS
Drain-source cutoff current
V
= 600 V, VGS = − 3 V
DS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V, VDS = 0
GS
Drain-source on-resistance
V
= 0 V, ID = 0.01 A
GS
Dynamic Characteristics
Forward transconductance
V
≥ 2 × ID× R
DS
DS(on)max
, ID = 0.01 A
Input capacitance
V
= − 3 V, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= − 3 V, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= − 3 V, VDS = 25 V, f = 1 MHz
GS
Turn-on time
V
=30V,VGS = − 3 V ... + 5 V,RGS =50Ω,
DD
I
=0.2 A
D
Turn-off time
V
=30V,VGS = − 3 V ... + 5 V,RGS =50Ω,
DD
I
=0.2 A
D
t
, (ton = t
on
t
, (t
off
+ tr) t
d(on)
= t
off
+ tf) t
d(off)
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iiss
C
oss
C
rss
d(on)
t
r
d(off)
t
f
V
600 – –
− 1.8 − 1.5 − 0.7
–
–
–
–
100
200
nA
µA
nA
– 10 100
Ω
–4060
S
0.01 0.04 –
pF
– 110 150
–812
–35
–46ns
–1015
–1520
–2030
Semiconductor Group 2
BSP 135
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous reverse drain current
T
= 25 ˚C
A
Pulsed reverse drain current
T
= 25 ˚C
A
Diode forward on-voltage
I
= 0.2 A, VGS = 0
F
V
Grouping Symbol Limit Values Unit Test Condition
GS(th)
I
S
– – 0.100
I
SM
– – 0.300
V
SD
– 0.90 1.30
min. max.
Range of
Threshold voltage selected in groups
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
V
GS(th)
P
R
S
T
U
V
W
∆V
GS(th)
1)
:
V
GS(th)
– 0.15 V –
– 0.95
– 1.08
– 1.21
– 1.34
– 1.47
– 1.60
– 1.73
– 0.80
– 0.93
– 1.06
– 1.19
– 1.32
– 1.45
– 1.58
V
V
V
V
V
V
V
V
DS1
V
DS2
I
= 1 mA
D
Package Outline
A
V
= 0.2 V;
= 3 V;
SOT-223
Dimensions in mm
Semiconductor Group 3
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