Siemens BSP129 Datasheet
SIPMOS Small-Signal Transistor BSP 129
● V
● I
D
● R
● N channel
● Depletion mode
● High dynamic resistance
● Available grouped in V
Type Ordering
DS
DS(on)
240 V
0.2 A
20 Ω
Code
GS(th)
Tape and Reel Information Pin Configuration Marking Package
1234
BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223
BSP 129 Q67000-S314 E7941: 1000 pcs/reel
V
selected in groups:
GS(th)
(see page 212)
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
Drain-gate voltage,
R
= 20 kΩ V
GS
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
Pulsed drain current,
Max. power dissipation,
T
= 34 ˚C I
A
T
= 25 ˚C I
A
T
= 25 ˚C P
A
Operating and storage temperature range
Thermal resistance
1)
chip-ambient
chip-soldering point
V
V
D
D puls
T
j
R
R
DS
DGR
GS
gs
tot
, T
thJA
thJS
stg
240 V
240
± 14
± 20
0.2 A
0.6
1.7 W
– 55 … + 150 ˚C
72
K/W
12
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
Semiconductor Group 1 09.96
BSP 129
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
= − 3 V, ID = 0.25 mA
GS
Gate threshold voltage
V
= 3 V, ID = 1 mA
DS
Drain-source cutoff current
V
= 240 V, VGS = − 3 V
DS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V, VDS = 0
GS
Drain-source on-resistance
V
= 0 V, ID = 0.014 A
GS
Dynamic Characteristics
Forward transconductance
V
≥ 2 × ID× R
DS
DS(on)max
, ID = 0.25 A
Input capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Turn-on time
V
=30V,VGS = − 2 V ... + 5 V, RGS =50Ω,
DD
I
=0.25A
D
Turn-off time
V
=30V,VGS = − 2 V ... + 5 V, RGS =50Ω,
DD
I
=0.25A
D
t
, (ton = t
on
t
, (t
off
+ tr) t
d(on)
= t
off
+ tf) t
d(off)
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iiss
C
oss
C
rss
d(on)
t
r
d(off)
t
f
V
240 – –
− 1.8 − 1.2 − 0.7
–
–
–
–
100
200
nA
µA
nA
– 10 100
Ω
– 7.0 20
S
0.14 0.2 –
pF
– 110 150
–2030
–710
–46ns
–1015
–1520
–2535
Semiconductor Group 2
BSP 129
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous reverse drain current
T
= 25 ˚C
A
Pulsed reverse drain current
T
= 25 ˚C
A
Diode forward on-voltage
I
= 0.3 A, VGS = 0
F
V
Grouping Symbol Limit Values Unit Test Condition
GS(th)
I
S
– – 0.15
I
SM
– – 0.45
V
SD
– 0.7 1.4
min. max.
Range of
Threshold voltage selected in groups
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
V
GS(th)
G
C
D
∆V
GS(th)
1)
:
V
GS(th)
F
A
B
– 0.2 V –
– 1.600
– 1.700
– 1.800
– 1.900
– 2.000
– 2.100
– 1.400
– 1.500
– 1.600
– 1.700
– 1.800
– 1.900
V
V
V
V
V
V
V
DS1
V
DS2
I
= 10 µA
D
A
V
= 0.2 V;
= 3 V;
Package Outline
SOT-223
Dimensions in mm
Semiconductor Group 3
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