Siemens BSM50GB170DN2 Datasheet

IGBT Power Module

Preliminary data

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

BSM 50 GB 170 DN2

• R

G on,min

Type

= 27 Ohm

V

CE

I

C

Package Ordering Code

BSM 50 GB 170 DN2 1700V 72A HALF-BRIDGE 1 C67070-A2701-A67

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage

R

GE

= 20 k

Ω

Gate-emitter voltage DC collector current

T

= 25 °C

C

T

= 80 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 80 °C

C

t

Power dissipation per IGBT

T

= 25 °C

C

Chip temperature Storage temperature

= 1 ms

p

Symbol Values Unit

V V

CE CGR

1700 V

1700

V I

GE

C

± 20

A 72 50

I

Cpuls

144 100

P

tot

W

500

T

j

T

stg

+ 150 °C

-55 ... + 150

≤

Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

R R V

thJC thJC is

D

0.25

≤

0.75

K/W

4000 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group

1 Jul-31-1996

BSM 50 GB 170 DN2

Electrical Characteristics

= 25 °C, unless otherwise specified

, at T

j

Parameter

Static Characteristics

Gate threshold voltage

V

GE

=

V

CE, IC

= 4 mA

Collector-emitter saturation voltage

V V

GE GE

= 15 V, = 15 V,

= 50 A,

I

C

= 50 A,

I

C

= 25 °C

T

j

= 125 °C

T

j

Zero gate voltage collector current

= 1700 V,

V

CE

= 1700 V,

V

CE

V V

= 0 V,

GE

= 0 V,

GE

= 25 °C

T

j

= 125 °C

T

j

Gate-emitter leakage current

V

GE

= 20 V,

V

CE

= 0 V

Symbol Values Unit

min. typ. max.

V

GE(th)

V

4.8 5.5 6.2

V

CE(sat)

I

CES

I

GES

-

3.4

4.6

0.4

1.6

3.9

5.3 mA

0.5

nA

- - 320

AC Characteristics

Transconductance

V

CE

= 20 V,

= 50 A

I

C

Input capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Output capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Reverse transfer capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

g

C

fs

iss

oss

rss

S

18 - -

nF

- 8 -

- 0.64 -

- 0.25 -

Semiconductor Group

2 Jul-31-1996

BSM 50 GB 170 DN2

Electrical Characteristics Parameter

= 25 °C, unless otherwise specified

, at T

j

Symbol Values Unit

Switching Characteristics, Inductive Load at

Turn-on delay time

= 1200 V,

V R

CC Gon

= 27

Ω

V

GE

Rise time

= 1200 V,

V R

CC Gon

= 27

Ω

V

GE

Turn-off delay time

= 1200 V,

V R

CC Goff

= 27

Ω

V

GE

Fall time

= 1200 V,

V R

CC Goff

= 27

Ω

V

GE

= 15 V,

= -15 V,

= 50 A

I

C

= 50 A

I

C

= 50 A

I

C

= 50 A

I

C

t

d(on)

t

r

t

d(off)

t

f

min. typ. max.

T

= 125 °C

j

- 350 700

- 150 300

- 650 1000

- 90 140

ns

Free-Wheel Diode

Diode forward voltage

= 50 A,

I

F

= 50 A,

I

F

V V

= 0 V,

GE

= 0 V,

GE

= 25 °C

T

j

= 125 °C

T

j

Reverse recovery time

= 50 A,

I

F

iF/dt = -600 A/µs,

d

= -1200 V,

V

R

= 125 °C

T

j

Reverse recovery charge

= 50 A,

I

F

iF/dt = -600 A/µs

d

= 25 °C

T

j

= 125 °C

T

j

= -1200 V,

V

R

V

GE

= 0 V

V

t

Q

F

-

rr

2.3

2.1

2.8

-

V

µs

- 0.3 -

rr

-

4 12

-

µC

Semiconductor Group

3 Jul-31-1996