Siemens BSM400GB60DN2 Datasheet
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM 400 GB 60 DN2
Type
V
CE
I
C
Package Ordering Code
BSM 400 GB 60 DN2 600V 475A HALF-BRIDGE 2 C67070-A2120-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 60 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 60 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
600 V
600
V
I
GE
C
± 20
A
475
400
I
Cpuls
950
800
P
tot
W
1400
T
j
T
stg
+ 150 °C
-40 ... + 125
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
R
R
V
thJC
thJC
is
D
≤
0.09
≤
0.18
K/W
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
Semiconductor Group
1 Apr-25-1997
BSM 400 GB 60 DN2
Electrical Characteristics
, at T
= 25 °C, unless otherwise specified
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 9 mA
Collector-emitter saturation voltage
= 15 V
V
GE
= 400 A
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
V
V
CE
CE
= 600 V,
= 600 V,
V
V
GE
GE
= 0 V,
= 0 V,
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.1
2.2
5
25
2.55
2.65
mA
-
µA
- - 1
AC Characteristics
Transconductance
V
CE
= 20 V,
= 400 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
100 - -
nF
- 22 -
- 2.5 -
- 1.5 -
Semiconductor Group
2 Apr-25-1997
BSM 400 GB 60 DN2
Electrical Characteristics
Parameter
, at T
= 25 °C, unless otherwise specified
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 300 V,
V
R
CC
Gon
= 4.7
Ω
V
GE
Rise time
= 300 V,
V
R
CC
Gon
= 4.7
Ω
V
GE
Turn-off delay time
= 300 V,
V
R
CC
Goff
= 4.7
Ω
V
GE
Fall time
= 300 V,
V
R
CC
Goff
= 4.7
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 400 A
I
C
= 400 A
I
C
= 400 A
I
C
= 400 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 200 -
- 190 -
- 680 -
- 510 -
ns
Free-Wheel Diode
Diode forward voltage
= 400 A,
I
F
= 400 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
T
T
Reverse recovery time
= 400 A,
I
F
iF/dt = -2000 A/µs,
d
= -300 V,
V
R
= 125 °C
T
j
Reverse recovery charge
= 400 A,
I
F
iF/dt = -2000 A/µs,
d
= -300 V,
V
R
= 125 °C
T
j
= 25 °C
j
= 125 °C
j
= 0 V
V
GE
= 0 V
V
GE
V
t
Q
F
-
-
rr
1.9
1.7
2.4
-
V
ns
- 170 -
rr
µC
- 15 -
Semiconductor Group
3 Apr-25-1997
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