Siemens BSM35GB120DN2 Datasheet

IGBT Power Module

Preliminary data

• Half-bridge

• Including fast free-wheeling diodes

• Doubled diode area

• Package with insulated metal base plate

BSM 35 GB 120 DN2

Type

V

CE

I

C

Package Ordering Code

BSM 35 GB 120 DN2 1200V 50A HALF-BRIDGE 1 C67070-A2111-A70

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage

R

GE

= 20 k

Ω

Gate-emitter voltage DC collector current

T

= 25 °C

C

T

= 80 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 80 °C

C

t

Power dissipation per IGBT

T

= 25 °C

C

Chip temperature Storage temperature

= 1 ms

p

Symbol Values Unit

V V

CE CGR

1200 V

1200

V I

GE

C

± 20

A 50 35

I

Cpuls

100

70

P

tot

W

280

T

j

T

stg

+ 150 °C

-55 ... + 150

≤

Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

R R V

thJC thJC is

D

0.44

≤

0.8

K/W

2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group

1 Mar-28-1996

BSM 35 GB 120 DN2

Electrical Characteristics

= 25 °C, unless otherwise specified

, at T

j

Parameter

Static Characteristics

Gate threshold voltage

V

GE

=

V

CE, IC

= 1.2 mA

Collector-emitter saturation voltage

V V

GE GE

= 15 V, = 15 V,

= 35 A,

I

C

= 35 A,

I

C

= 25 °C

T

j

= 125 °C

T

j

Zero gate voltage collector current

= 1200 V,

V

CE

= 1200 V,

V

CE

V V

= 0 V,

GE

= 0 V,

GE

= 25 °C

T

j

= 125 °C

T

j

Gate-emitter leakage current

V

GE

= 20 V,

V

CE

= 0 V

Symbol Values Unit

min. typ. max.

V

GE(th)

V

4.5 5.5 6.5

V

CE(sat)

I

CES

I

GES

-

2.7

3.3

0.6

2.4

3.2

3.9 mA

1

nA

- - 150

AC Characteristics

Transconductance

V

CE

= 20 V,

= 35 A

I

C

Input capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Output capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Reverse transfer capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

g

C

fs

iss

oss

rss

S

11 - -

nF

- 2 -

- 0.3 -

- 0.14 -

Semiconductor Group

2 Mar-28-1996

BSM 35 GB 120 DN2

Electrical Characteristics Parameter

= 25 °C, unless otherwise specified

, at T

j

Symbol Values Unit

Switching Characteristics, Inductive Load at

Turn-on delay time

= 600 V,

V R

CC Gon

= 39

Ω

V

GE

Rise time

= 600 V,

V R

CC Gon

= 39

Ω

V

GE

Turn-off delay time

= 600 V,

V R

CC Goff

= 39

Ω

V

GE

Fall time

= 600 V,

V R

CC Goff

= 39

Ω

V

GE

= 15 V,

= -15 V,

= 35 A

I

C

= 35 A

I

C

= 35 A

I

C

= 35 A

I

C

t

d(on)

t

r

t

d(off)

t

f

min. typ. max.

T

= 125 °C

j

- 60 120

- 400 600

- 50 75

ns

Free-Wheel Diode

Diode forward voltage

= 35 A,

I

F

= 35 A,

I

F

V V

= 0 V,

GE

= 0 V,

GE

= 25 °C

T

j

= 125 °C

T

j

Reverse recovery time

= 35 A,

I

F

iF/dt = -800 A/µs,

d

= -600 V,

V

R

V

= 125 °C

T

j

Reverse recovery charge

= 35 A,

I

F

iF/dt = -800 A/µs

d

= 25 °C

T

j

= 125 °C

T

j

= -600 V,

V

R

V

GE

= 0 V

V

t

Q

F

-

rr

2.3

1.9

2.8

-

V

µs

- 0.25 -

rr

-

2 5

-

µC

Semiconductor Group

3 Mar-28-1996