Siemens BSM300GA170DN2E3166 Datasheet

IGBT Power Module

Preliminary data

• Half-bridge

• Including fast free-wheeling diodes

• Enlarged diode area

• Package with insulated metal base plate

BSM300GA170DN2 E3166

• R

G on,min

Type

= 5.6 Ohm

V

CE

I

C

Package Ordering Code

BSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1 C67070-A2710-A67

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage

R

GE

= 20 k

Ω

Gate-emitter voltage DC collector current

T

= 25 °C

C

T

= 80 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 80 °C

C

t

Power dissipation per IGBT

T

= 25 °C

C

Chip temperature Storage temperature

= 1 ms

p

Symbol Values Unit

V V

CE CGR

1700 V

1700

V I

GE

C

± 20

A 440 300

I

Cpuls

880 600

P

tot

W

2500

T

j

T

stg

+ 150 °C

-55 ... + 150

≤

Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

R R V

thJC thJC is

D

0.05

≤

0.1

K/W

4000 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group

1 Jul-31-1996

BSM300GA170DN2 E3166

Electrical Characteristics

= 25 °C, unless otherwise specified

, at T

j

Parameter

Static Characteristics

Gate threshold voltage

V

GE

=

V

CE, IC

= 20 mA

Collector-emitter saturation voltage

V V

GE GE

= 15 V, = 15 V,

= 300 A,

I

C

= 300 A,

I

C

= 25 °C

T

j

= 125 °C

T

j

Zero gate voltage collector current

= 1700 V,

V

CE

= 1700 V,

V

CE

V V

= 0 V,

GE

= 0 V,

GE

= 25 °C

T

j

= 125 °C

T

j

Gate-emitter leakage current

V

GE

= 20 V,

V

CE

= 0 V

Symbol Values Unit

min. typ. max.

V

GE(th)

V

4.8 5.5 6.2

V

CE(sat)

I

CES

I

GES

-

3.4

4.6

2 8

3.9

5.3 mA

3

nA

- - 400

AC Characteristics

Transconductance

V

CE

= 20 V,

= 300 A

I

C

Input capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Output capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Reverse transfer capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

g

C

fs

iss

oss

rss

S

108 - -

nF

- 44 -

- 3.5 -

- 1 -

Semiconductor Group

2 Jul-31-1996

BSM300GA170DN2 E3166

Electrical Characteristics Parameter

= 25 °C, unless otherwise specified

, at T

j

Symbol Values Unit

Switching Characteristics, Inductive Load at

Turn-on delay time

= 1200 V,

V R

CC Gon

= 5.6

Ω

V

GE

Rise time

= 1200 V,

V R

CC Gon

= 5.6

Ω

V

GE

Turn-off delay time

= 1200 V,

V R

CC Goff

= 5.6

Ω

V

GE

Fall time

= 1200 V,

V R

CC Goff

= 5.6

Ω

V

GE

= 15 V,

= -15 V,

= 300 A

I

C

= 300 A

I

C

= 300 A

I

C

= 300 A

I

C

t

d(on)

t

r

t

d(off)

t

f

min. typ. max.

T

= 125 °C

j

- 600 1200

- 200 400

- 1280 1900

- 110 160

ns

Free-Wheel Diode

Diode forward voltage

= 300 A,

I

F

= 300 A,

I

F

V V

= 0 V,

GE

= 0 V,

GE

T T

Reverse recovery time

= 300 A,

I

F

iF/dt = -1500 A/µs,

d

= -1200 V,

V

R

= 125 °C

T

j

Reverse recovery charge

= 300 A,

I

F

iF/dt = -1500 A/µs

d

= 25 °C

T

j

= 125 °C

T

j

= -1200 V,

V

R

= 25 °C

j

= 125 °C

j

= 0 V

V

GE

= 0 V

V

GE

V

t

Q

F

-

rr

2

1.8

2.5

-

V

µs

- 1-

rr

-

28 100

-

µC

Semiconductor Group

3 Jul-31-1996