Siemens BSM300GA170DN2E3166 Datasheet
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
BSM300GA170DN2 E3166
• R
G on,min
Type
= 5.6 Ohm
V
CE
I
C
Package Ordering Code
BSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1 C67070-A2710-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 80 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1700 V
1700
V
I
GE
C
± 20
A
440
300
I
Cpuls
880
600
P
tot
W
2500
T
j
T
stg
+ 150 °C
-55 ... + 150
≤
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
R
R
V
thJC
thJC
is
D
0.05
≤
0.1
K/W
4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Jul-31-1996
BSM300GA170DN2 E3166
Electrical Characteristics
= 25 °C, unless otherwise specified
, at T
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 20 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 300 A,
I
C
= 300 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
= 1700 V,
V
CE
= 1700 V,
V
CE
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.8 5.5 6.2
V
CE(sat)
I
CES
I
GES
-
-
-
-
3.4
4.6
2
8
3.9
5.3
mA
3
nA
- - 400
AC Characteristics
Transconductance
V
CE
= 20 V,
= 300 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
108 - -
nF
- 44 -
- 3.5 -
- 1 -
Semiconductor Group
2 Jul-31-1996
BSM300GA170DN2 E3166
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 1200 V,
V
R
CC
Gon
= 5.6
Ω
V
GE
Rise time
= 1200 V,
V
R
CC
Gon
= 5.6
Ω
V
GE
Turn-off delay time
= 1200 V,
V
R
CC
Goff
= 5.6
Ω
V
GE
Fall time
= 1200 V,
V
R
CC
Goff
= 5.6
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 300 A
I
C
= 300 A
I
C
= 300 A
I
C
= 300 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 600 1200
- 200 400
- 1280 1900
- 110 160
ns
Free-Wheel Diode
Diode forward voltage
= 300 A,
I
F
= 300 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
T
T
Reverse recovery time
= 300 A,
I
F
iF/dt = -1500 A/µs,
d
= -1200 V,
V
R
= 125 °C
T
j
Reverse recovery charge
= 300 A,
I
F
iF/dt = -1500 A/µs
d
= 25 °C
T
j
= 125 °C
T
j
= -1200 V,
V
R
= 25 °C
j
= 125 °C
j
= 0 V
V
GE
= 0 V
V
GE
V
t
Q
F
-
-
rr
2
1.8
2.5
-
V
µs
- 1-
rr
-
-
28
100
-
-
µC
Semiconductor Group
3 Jul-31-1996
Loading...