Siemens BSM25GAL120DN2 Datasheet
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM 25 GAL 120 DN2
Type
V
CE
I
C
Package Ordering Code
BSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 80 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1200 V
1200
V
I
GE
C
± 20
38
25
I
Cpuls
76
50
P
tot
200
T
j
T
stg
+ 150 °C
-55 ... + 150
A
W
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
R
thJC
R
thJC
THJC
R
V
is
D
DC
≤
≤
≤
0.6
1
0.8
K/W
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Mar-29-1996
BSM 25 GAL 120 DN2
Electrical Characteristics
, at T
= 25 °C, unless otherwise specified
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 1 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 25 A,
I
C
= 25 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
= 1200 V,
V
CE
= 1200 V,
V
CE
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.5
3.1
0.5
2
3
3.7
mA
0.8
nA
- - 180
AC Characteristics
Transconductance
V
CE
= 20 V,
= 25 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
10 - -
nF
- 1.65 -
- 0.25 -
- 0.11 -
Semiconductor Group
2 Mar-29-1996
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