Siemens BSM200GB120DN2 Datasheet
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM 200 GB 120 DN2
Type
V
CE
I
C
Package Ordering Code
BSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 80 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1200 V
1200
V
I
GE
C
± 20
A
290
200
I
Cpuls
580
400
P
tot
W
1400
T
j
T
stg
+ 150 °C
-55 ... + 150
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
R
thJC
R
thJCD
V
is
≤
0.09
≤
0.18
K/W
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Mar-29-1996
BSM 200 GB 120 DN2
Electrical Characteristics
= 25 °C, unless otherwise specified
, at T
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 8 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 200 A,
I
C
= 200 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
= 1200 V,
V
CE
= 1200 V,
V
CE
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.5
3.1
3
12
3
3.7
mA
4
nA
- - 400
AC Characteristics
Transconductance
V
CE
= 20 V,
= 200 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
108 - -
nF
- 13 -
- 2 -
- 1 -
Semiconductor Group
2 Mar-29-1996
BSM 200 GB 120 DN2
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 600 V,
V
R
CC
Gon
= 4.7
Ω
V
GE
Rise time
= 600 V,
V
R
CC
Gon
= 4.7
Ω
V
GE
Turn-off delay time
= 600 V,
V
R
CC
Goff
= 4.7
Ω
V
GE
Fall time
= 600 V,
V
R
CC
Goff
= 4.7
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 200 A
I
C
= 200 A
I
C
= 200 A
I
C
= 200 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 110 220
- 80 160
- 550 800
- 80 120
ns
Free-Wheel Diode
Diode forward voltage
= 200 A,
I
F
= 200 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
T
T
Reverse recovery time
= 200 A,
I
F
iF/dt = -2000 A/µs,
d
= -600 V,
V
R
= 125 °C
T
j
Reverse recovery charge
= 200 A,
I
F
iF/dt = -2000 A/µs
d
= 25 °C
T
j
= 125 °C
T
j
= -600 V,
V
R
= 25 °C
j
= 125 °C
j
= 0 V
V
GE
= 0 V
V
GE
V
t
Q
F
-
-
rr
2.3
1.8
2.8
-
V
µs
- 0.5 -
rr
-
-
12
36
-
-
µC
Semiconductor Group
3 Mar-29-1996
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