Siemens BSM181F Datasheet
SIMOPAC® Module BSM 181 F
V
I
R
● Power module
● Single switch
● FREDFET
● N channel
● Enhancement mode
● Package with insulated metal base plate
● Package outline/Circuit diagram: 1
DS
D
DS(on)
= 800 V
= 34 A
= 0.32 Ω
1)
Type Ordering Code
BSM 181 F C67076-A1052-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage
Drain-gate voltage,
R
= 20 kΩ V
GS
Gate-source voltage
Continuous drain current,
Pulsed drain current,
T
= 25 ˚C I
C
T
= 25 ˚C I
C
Operating and storage temperature range
Power dissipation,
T
= 25 ˚C P
C
Thermal resistance
Chip-case
2)
Insulation test voltage
, t = 1 min. V
V
V
D
D puls
T
j
R
DS
DGR
GS
, T
tot
th JC
is
stg
800 V
800
± 20
34 A
136
– 55 … + 150 ˚C
700 W
K/W
≤ 0.18
2500 V
ac
Creepage distance, drain-source – 16 mm
Clearance, drain-source – 11
DIN humidity category, DIN 40 040 – F –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group 64 03.96
BSM 181 F
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
= 0, ID = 0.25 mA
GS
Gate threshold voltage
V
= VDS, ID = 1 mA
GS
Zero gate voltage drain current
V
= 800 V, VGS = 0
DS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V, VDS = 0
GS
Drain-source on-state resistance
V
= 10 V, ID = 21 A
GS
Dynamic Characteristics
Forward transconductance
V
≥ 2 × ID× R
DS
DS(on)max.
, ID = 21 A
Input capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
ton(t
Turn-on time
V
= 400 V, VGS = 10 V
CC
I
= 21 A, RGS = 3.3 Ω
D
Turn-off time
V
= 400 V, VGS = 10 V
CC
I
= 21 A, RGS = 3.3 Ω
D
t
(t
off
on
off
= t
= t
d (on)
d (off)
+ t
+ t
)
r
)
f
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iiss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
800 – –
2.1 3.0 4.0
µA
–
–
20
300
250
1000
nA
– 10 100
Ω
– 0.25 0.32
15 35 – S
–2230nF
– 1 1.5
– 0.48 0.8
–60–ns
–90–
– 350 –
–70–
Semiconductor Group 65
BSM 181 F
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Fast-recovery reverse diode
Continuous reverse drain current
T
= 25 ˚C
C
Pulsed reverse drain current
T
= 25 ˚C
C
Diode forward on-voltage
I
= 68 A , VGS = 0
F
Reverse recovery time
I
= IS, diF/dt = 100 A/ µs, VR = 100 V
F
Reverse recovery charge
I
= IS, diF/dt = 100 A/ µs, VR = 100 V
F
T
= 25 ˚C
j
T
= 150 ˚C
j
I
I
V
t
Q
rr
S
SM
SD
rr
––34
– – 136
– 1.6 2
300 –
–
–
3
16
–
–
A
V
ns
µC
Semiconductor Group 66
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