IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM150GAL120DN2E3166
Type
V
CE
I
C
Package Ordering Code
BSM150GAL120DN2E31661200V 210A HALF BRIDGE GAL 2 C67076-A2112-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 80 °C
C
t
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1200 V
1200
V
I
GE
C
± 20
210
150
I
Cpuls
420
300
P
tot
1250
T
j
T
stg
+ 150 °C
-55 ... + 150
A
W
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
R
thJC
R
thJC
THJC
R
V
is
D
DC
≤
0.1
≤
0.25
≤
0.125
K/W
4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group
1 Nov-08-1996
BSM150GAL120DN2E3166
Electrical Characteristics
, at T
= 25 °C, unless otherwise specified
j
Parameter
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 6 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
= 150 A,
I
C
= 150 A,
I
C
= 25 °C
T
j
= 125 °C
T
j
Zero gate voltage collector current
= 1200 V,
V
CE
= 1200 V,
V
CE
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.5
3.1
2
8
3
3.7
mA
2.8
nA
- - 320
AC Characteristics
Transconductance
V
CE
= 20 V,
= 150 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
g
C
C
C
fs
iss
oss
rss
S
62 - -
nF
- 11 -
- 1.6 -
- 0.6 -
Semiconductor Group
2 Nov-08-1996
BSM150GAL120DN2E3166
Electrical Characteristics
Parameter
, at T
= 25 °C, unless otherwise specified
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 600 V,
V
R
CC
Gon
= 5.6
Ω
V
GE
Rise time
= 600 V,
V
R
CC
Gon
= 5.6
Ω
V
GE
Turn-off delay time
= 600 V,
V
R
CC
Goff
= 5.6
Ω
V
GE
Fall time
= 600 V,
V
R
CC
Goff
= 5.6
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 150 A
I
C
= 150 A
I
C
= 150 A
I
C
= 150 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 200 400
- 100 200
- 600 800
- 70 100
ns
Free-Wheel Diode
Diode forward voltage
= 150 A,
I
F
= 150 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
T
T
Reverse recovery time
= 150 A,
I
F
iF/dt = -1500 A/µs,
d
= -600 V,
V
R
= 125 °C
T
j
Reverse recovery charge
= 150 A,
I
F
iF/dt = -1500 A/µs
d
= 25 °C
T
j
= 125 °C
T
j
= -600 V,
V
R
= 25 °C
j
= 125 °C
j
= 0 V
V
GE
= 0 V
V
GE
V
t
Q
F
-
-
rr
2.3
1.8
2.8
-
V
µs
- 0.4 -
rr
-
-
5
18
-
-
µC
Semiconductor Group
3 Nov-08-1996
BSM150GAL120DN2E3166
Electrical Characteristics
, at T
= 25 °C, unless otherwise specified
j
Parameter
Chopper Diode
Chopper diode forward voltage
= 300 A,
I
FC
= 300 A,
I
FC
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Reverse recovery time, chopper
= 300 A,
I
FC
iF/dt = -2500 A/µs,
d
= -600 V,
V
R
V
= 125 °C
T
j
GE
= 0 V
Reverse recovery charge, chopper
= 300 A,
I
FC
iF/dt = -2500 A/µs
d
= 25 °C
T
j
= 125 °C
T
j
= -600 V,
V
R
V
GE
= 0 V
Symbol Values Unit
min. typ. max.
V
t
FC
rrC
-
-
2.3
1.8
2.8
-
V
µs
- 0.55 -
Q
rrC
-
-
14
40
-
-
µC
Semiconductor Group
4 Nov-08-1996
Circuit Diagram
BSM150GAL120DN2E3166
Package Outlines
Dimensions in mm
Weight: 420g
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