Siemens BSM111AR Datasheet

SIMOPAC® Module BSM 111 AR
V I R
Power module
Single switch
N channel
Enhancement mode
Package with insulated metal base plate
Package outline/Circuit diagram: 1
DS D
DS(on)
= 100 V = 200 A = 8.5 m
1)
Type Ordering Code
BSM 111 AR C67076-S1013-A2
Maximum Ratings Parameter Symbol Values Unit
Drain-source voltage Drain-gate voltage,
R
= 20 k V
GS
Gate-source voltage Continuous drain current, Pulsed drain current,
T
= 25 ˚C I
C
T
= 25 ˚C I
C
Operating and storage temperature range Power dissipation,
T
= 25 ˚C P
C
Thermal resistance
V
V
D
D puls
T
j
R
DS
DGR
GS
, T
tot
thJC
stg
Chip-case Insulation test voltage
, t = 1 min. V
is
ac
2)
Creepage distance, drain-source 16 mm Clearance, drain-source 11 DIN humidity category, DIN 40 040 F – IEC climatic category, DIN IEC 68-1 55/150/56
1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group 24 03.96
BSM 111 AR
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
= 0, ID = 0.25 mA
GS
Gate threshold voltage
V
= VGS, ID = 1 mA
DS
Zero gate voltage drain current
V
= 100 V, VGS = 0
DS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V, VDS = 0
GS
Drain-source on-state resistance
V
= 10 V, ID = 130 A
GS
Dynamic Characteristics
Forward transconductance
V
2 × IR
DS
DS(on) max.
, ID = 130 A
Input capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0 , VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
t
Turn-on time
V
= 50 V, VGS = 10 V
CC
I
= 130 A, RGS = 3.3
D
Turn-off time
V
= 50 V, VGS = 10 V
CC
I
= 130 A, RGS = 3.3
D
(ton = t
on
t
off(toff
= t
d (on)
d (off)
+ tr)
+ tf)
V
(BR)DSS
V
GS(th)
I
DSS
I
GS
R
DS(on)
g
fs
C
iiss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
100
2.1 3.0 4.0 µA
– –
50 300
250 1000
nA
10 100
m
7 8.5
60 75 S
–1013nF
5 7.5
1.8 2.7
280 ns – 220
220 – –60–
Semiconductor Group 25
BSM 111 AR
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse diode
Continuous reverse drain current
T
= 25 ˚C
C
Pulsed reverse drain current
T
= 25 ˚C
C
Diode forward on-voltage
I
= 400 A , VGS = 0
F
Reverse recovery time
I
= IS, diF/dt = 100 A/ µs, VR = 30 V
F
Reverse recovery charge
I
= IS, diF/dt= 100 A/ µs, VR = 30 V
F
I
I
V
t
Q
rr
S
SM
SD
rr
A
200
600
V
1.25 1.6
ns
400
µC
3.5
Semiconductor Group 26
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