Page 1
BFY450
HiRel
•
NPN Silicon RF Transistor
HiRel
Discrete and Microwave Semiconductor
• For Medium Power Amplifiers
• Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain G
ma = 16dB at 1.8 GHz
• Hermetically sealed microwave package
• Transition Frequency
•
6,(*(7/LQH
6LH
mens *rounded (mitter 7ransistor-
GHz fT-
/LQH
f
= 20 GHz
T
• Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
34
12
Type Marking Ordering Code Pin Configuration
1 2 3 4
BFY450 (ql) - see below C E B E Micro-X
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1663
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1708
(see order instructions for ordering example)
Package
Semiconductor Gr oup 1 of 5 Draft B, Jul. 98
Page 2
BFY450
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation,
≤ 110°C
T
S
1), 2)
Junction temperature T
Operating temperature range T
Storage temperature range T
CEO
CBO
EBO
C
B
P
tot
j
op
stg
4.5 V
15 V
1.5 V
100 mA
10 mA
450 mW
175
-65...+175
-65...+175
Thermal Resistance
Junction-soldering point
2)
R
th JS
< 145
Notes.:
1) At TS = + 110 °C. For TS > + 110 °C derating is required.
is measured on the collector lead at the soldering point to the pcb.
2) T
S
°C
°C
°C
K/W
Electrical Characteristics
=25°C; unless otherwise specified
at T
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Collector-emitter cutoff current
VCE = 4.5 V, IB = 1.0µA
Emitter-base cuttoff current
= 1.5 V, IC = 0
V
EB
DC current gain
= 20 mA, VCE = 1 V
I
C
1.)
I
I
I
h
CBO
CEX
EBO
FE
- - 100 nA
- - 200
µA
(t.b.d.)
--50
µA
50 90 150 -
Notes:
1.) This Test assures V(BR)CE0 > 4.5V
Semiconductor Gr oup 2 of 5 Draft B, Jul. 98
Page 3
BFY450
Electrical Characteristics (continued)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
= 90mA, VCE = 3 V, f = 1.0 GHz
I
C
= 90mA, VCE = 3 V, f = 2.0 GHz
I
C
Collector-base capacitance
= 2 V, VBE = vbe = 0, f = 1 MHz
V
CB
Collector-emitter capacitance
= 2 V, VBE = vbe = 0, f = 1 MHz
V
CE
Emitter-base capacitance
= 0.5V, VCB = vcb = 0, f = 1 MHz
V
EB
Noise Figure
= 10 mA, VCE = 2 V, f = 1.8 GHz,
I
C
= Z
Z
S
sopt
Insertion power gain
= 50 mA, VCE = 2 V, f = 1.8 GHz
I
C
Z
= ZL = 50 Ω
S
Power gain
f
T
18
-
C
CB
C
CE
C
EB
- 0.42 0.9 pF
- 1.27 2.6 pF
- 2.0 3 pF
22
17
-
-
GHz
F - 1.25 2.0 dB
2
|S
|
21e
Gma
8.0 12 - dB
1.)
- 16.0 - dB
= 50 mA, VCE = 2 V, f = 1.8 GHz
I
C
= Z
Z
S
, ZL = Z
Sopt
Lopt
1dB Compression point
= 50 mA, VCE = 2 V, f = 1.8 GHz
I
C
= Z
Z
S
, ZL = Z
Sopt
Lopt
Notes.:
6
1)
*
PD
21
=−−
NN
(),
6
12
2
1
*
P
-1dB
6
21
=
PV
6
12
- 19 - dBm
Semiconductor Gr oup 3 of 5 Draft B, Jul. 98
Page 4
BFY450
Order Instructions:
HiRel
Full type variant including quality level must be specified by the orderer. For
and Microwave Semiconductors the ordering code specifies device family and quality level.
Ordering Form:
Ordering Code: Q..........
BFY450 (ql)
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702F1708
BFY450 ES
For BFY450 in ESA Space Quality Level
Further Informations:
Discrete
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
HiRel
-
Please contact also our marketing division :
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: [email protected]
Address: Siemens Semiconductors,
Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
Semiconductor Gr oup 4 of 5 Draft B, Jul. 98
Page 5
BFY450
Micro-X Package
4
3
1
2
Published by Siemens Semiconductors, High Frequency
Products Marketing, P.O.Box 801709, D-81617 Munich.
Siemens AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for c omponents per se,
not for applications, processes and circuits implemented
within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offic es of Semiconductor Group in Germany or
the Siemens Companies and Representatives woldwide
(see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens Semiconductors is a certified CECC and QS9000
manufacturer (this includes ISO 9000).
Semiconductor Gr oup 5 of 5 Draft B, Jul. 98
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