Siemens BFQ74 Datasheet

NPN Silicon RF Transistor BFQ 74

● For low-noise amplifiers in the GHz range,

and broadband analog and digital applications
in telecommunications systems at collector
currents from 1 mA to 25 mA.

● Hermetically sealed ceramic package.

● HiRel/Mil screening available.

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking

Ordering Code
(tape and reel)

BFQ 74 Q62702-F78874 Cerec-X

Pin Configuration

1 2 3 4

B E C E

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 16 V

Collector-emitter voltage, VBE = 0 VCES 25
Collector-base voltage V

CB0 25

Emitter-base voltage VEB0 2
Collector current I

C 35 mA

Peak collector current, f ≥ 10 MHz ICM 45
Base current IB 5
Total power dissipation, T

S ≤ 115 ˚C

3)

Ptot 300 mW

Junction temperature Tj 175 ˚C

1)

Ambient temperature range T
Storage temperature range T

A – 65 … + 175
stg – 65 … + 175

Thermal Resistance

Junction - ambient
Junction - soldering point

1)

For detailed dimensions see chapter Package Outlines.

2)

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

3)

TS is measured on the collector lead at the soldering point to the pcb.

2)

3)

Rth JA ≤ 280 K/W
Rth JS ≤ 200

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BFQ 74

BFQ 74

Parameter Symbol

DC Characteristics

V

(BR)CE0 16 – –

C = 1 mA, IB = 0

I

I

CES – – 100

CE = 25 V, VBE = 0

V

I

CB0 ––50

CB = 15 V, IE = 0

V

I

EB0 ––10

EB = 2 V, IC = 0

V

FE

h

I

C = 5 mA, VCE = 10 V
C = 15 mA, VCE = 10 V

I

V

CEsat – 0.13 0.3

C = 30 mA, IB = 3 mA

I

Base-emitter voltage

C = 10 mA, VCE = 10 V

I

V

BE – 0.78 –

min. typ. max.

50
50

110
120

250
–

UnitValues

VCollector-emitter breakdown voltage

µACollector-emitter cutoff current

nACollector-base cutoff current

µAEmitter-base cutoff current

–DC current gain

VCollector-emitter saturation voltage

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BFQ 74

BFQ 74

Parameter Symbol

AC Characteristics

T

f

C = 5 mA, VCE = 10 V, f = 200 MHz

I

C = 15 mA, VCE = 10 V, f = 200 MHz

I

C

cb – 0.3 0.4

CB = 10 V, VBE = vbe = 0, f = 1 MHz

V

C

Collector-emitter capacitance

CE = 10 V, VBE = vbe = 0, f = 1 MHz

V

Input capacitance

EB = 0.5 V, IC = ic = 0, f = 1 MHz

V

Output capacitance

CE = 10 V, VBE = vbe = 0, f = 1 MHz

V

ce – 0.4 –

C

ibo – 1.35 –

C

obs – 0.7 –

F

I

C = 3 mA, VCE = 10 V, f = 10 MHz, ZS = 75 Ω
C = 5 mA, VCE = 10 V, f = 800 MHz, ZS = 50 Ω

I

C = 10 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt

I

min. typ. max.

–
–

–
–
–

4.4
6

0.9

1.4

2.5

–
–

–
–

2.9

UnitValues

GHzTransition frequency

pFCollector-base capacitance

dBNoise figure

Power gain

C = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω

I

C = 15 mA, VCE = 10 V, f = 4 GHz, Z0 = 50 Ω

I

Transducer gain

C = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω

I

two-tone intermodulation test

C = 25 mA, VCE = 10 V, dIM = 60 dB,

I

1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω

f

C = 25 mA, VCE = 10 V, f = 800 MHz

I

1)

S21e

(k

–

k2–1)

√

S12e

2)

S21e
S12e

G
G

I S

ma
ms

21e I

1
2

–

)

–

)

2

– 9.8 –

14

9.8

–
–

Vo1 = Vo2 – 160 –

IP

3 –27–

mVLinear output voltage

dBmThird order intercept point

BFQ 74

BFQ 74

Total power dissipation Ptot = f (TA*; TS)

*Package mounted on alumina

Transition frequency fT = f (IC)

f = 200 MHz

Collector-base capacitance C

BE = vbe = 0, f = 1 MHz

V

cb = f (VCB)

BFQ 74

BFQ 74

Common Emitter Noise Parameters

Γ

f

Fmin Gp(Fmin) RN NF50 Ω Gp(F50Ω)

opt

GHz dB dB MAG ANG Ω –dBdB

IC = 3 mA, VCE = 10 V, Z0 = 50 Ω

0.01 0.7 – (Z

IC = 10 mA, VCE = 10 V, Z0 = 50 Ω

0.01

0.8

2.0

1.05

1.3

2.5

–

17.5

11.5

0.22

0.20

Noise figure F = f (IC)

CE = 10 V, f = 10 MHz

V

S = 150 Ω) – – 1.2 –

S = 75 Ω)

(Z

82
137

–

11.5

23.5

–

0.20

0.60

1.2

1.4

2.7

–

16.8
10