Siemens BFQ72 Datasheet

NPN Silicon RF Transistor BFQ 72

● For low-distortion broadband amplifiers up to 2 GHz

at collector currents from 10 mA to 30 mA.

● Hermetically sealed ceramic package.

● HiRel/Mil screening available.

● CECC-type available: CECC 50002/263.

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

(tape and reel)

BFQ 72 Q62702-F77672 Cerec-X

Pin Configuration

1 2 3

B E C

Package

4

E

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 15 V

Collector-emitter voltage, VBE = 0 VCES 20
Collector-base voltage V

CB0 20

Emitter-base voltage VEB0 2.5
Collector current I

C 50 mA

Base current IB 10
Total power dissipation, T

S ≤ 112 ˚C

3)

Ptot 350 mW

Junction temperature Tj 175 ˚C

1)

Ambient temperature range T
Storage temperature range T

A – 65 … + 175
stg – 65 … + 175

Thermal Resistance

Junction - ambient
Junction - soldering point

1)

For detailed dimensions see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

3)

TS is measured on the collector lead at the soldering point to the pcb.

2)

3)

Rth JA ≤ 260 K/W
Rth JS ≤ 180

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BFQ 72

Parameter Symbol

DC Characteristics

V

(BR)CE0 15 – –

C = 1 mA, IB = 0

I

I

CES ––10

CE = 20 V, VBE = 0

V

I

CB0 ––50

CB = 10 V, IE = 0

V

I

EB0 ––10

EB = 2 V, IC = 0

V

FE

h

I

C = 25 mA, VCE = 5 V
C = 50 mA, VCE = 5 V

I

V

CEsat – 0.15 0.4

C = 50 mA, IB = 5 mA

I

Base-emitter voltage

C = 25 mA, VCE = 5 V

I

V

BE – 0.78 –

min. typ. max.

40
40

90
–

200
–

UnitValues

VCollector-emitter breakdown voltage

µACollector-emitter cutoff current

nACollector-base cutoff current

µAEmitter-base cutoff current

–DC current gain

VCollector-emitter saturation voltage

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BFQ 72

Parameter Symbol

AC Characteristics

T

f

C = 25 mA, VCE = 5 V, f = 200 MHz

I

C = 50 mA, VCE = 5 V, f = 200 MHz

I

C

cb – 0.55 0.7

CB = 10 V, VBE = vbe = 0, f = 1 MHz

V

C

Collector-emitter capacitance

CE = 10 V, VBE = vbe = 0, f = 1 MHz

V

Input capacitance

EB = 0.5 V, IC = ic = 0, f = 1 MHz

V

Output capacitance

CE = 10 V, VBE = vbe = 0, f = 1 MHz

V

ce – 0.4 –

C

ibo – 2.1 –

C

obs – 0.95 1.5

F

I

C = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 75 Ω
C = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω

I

min. typ. max.

–
–

–
–

5.1

4.7

1.7

2.5

–
–

–
–

UnitValues

GHzTransition frequency

pFCollector-base capacitance

dBNoise figure

Power gain

C = 25 mA, VCE = 8 V, f = 800 MHz,

I

S = ZSopt, ZL = ZLopt

Z

Transducer gain

C = 25 mA, VCE = 8 V, f = 1 GHz, Z0 = 50 Ω

I

two-tone intermodulation test

C = 25 mA, VCE = 8 V, dIM = 60 dB

I

1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω

f

C = 25 mA, VCE = 8 V, f = 800 MHz

I

Gpe –18–

2

21e I

I S

o1 = Vo2 – 240 –

V

IP

3 – 30.5 –

– 12.5 –

mVLinear output voltage

dBmThird order intercept point

BFQ 72

Total power dissipation Ptot = f (TA*; TS)

*Package mounted on alumina

Transition frequency fT = f (IC)

CE = 5 V, f = 200 MHz

V

Collector-base capacitance C

BE = vbe = 0, f = 1 MHz

V

cb = f (VCB)

BFQ 72

Common Emitter Noise Parameters

Γ

f

Fmin Gp(Fmin) RN NF50 Ω Gp(F50Ω)

GHz dB dB MAG ANG – dB dB

IC = 2 mA, VCE = 8 V, Z0 = 50 Ω

opt

0.01 1.0 – (Z

IC = 10 mA, VCE = 8 V, Z0 = 50 Ω

0.01

0.8

1.5

2.3

–

14.7

0.26

Noise figure F = f (ZS)

CE = 8 V, f = 10 MHz

V

S = 150 Ω) – – 1.6 –

(ZS = 90 Ω)

99.5

–

16.5

–

0.31

1.7

2.45

–
14