Siemens BFQ71 Datasheet

NPN Silicon RF Transistor BFQ 71

● For broadband amplifiers up to 2 GHz and fast

non-saturated switches at collector currents from
1 mA to 20 mA.

● Hermetically sealed ceramic package.

● HiRel/Mil screening available.

● CECC-type available: CECC 50002/260.

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code

Marking

(tape and reel)

BFQ 71 Q62702-F77571 Cerec-X

Pin Configuration

1 2 3

B E C

Package

4

E

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 15 V

Collector-emitter voltage, VBE = 0 VCES 20
Collector-base voltage V

CB0 20

Emitter-base voltage VEB0 2.5
Collector current I

C 30 mA

Base current IB 4
Total power dissipation, T

S ≤ 103 ˚C

3)

Ptot 300 mW

Junction temperature Tj 175 ˚C

1)

Ambient temperature range T
Storage temperature range T

A – 65 … + 175
stg – 65 … + 175

Thermal Resistance

Junction - ambient
Junction - soldering point

1)

For detailed dimensions see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

3)

TS is measured on the collector lead at the soldering point to the pcb.

2)

3)

Rth JA ≤ 320 K/W
Rth JS ≤ 240

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BFQ 71

Parameter Symbol

DC Characteristics

V

(BR)CE0 15 – –

C = 1 mA, IB = 0

I

I

CB0 ––50

CB = 10 V, IE = 0

V

I

EB0 ––10

EB = 2 V, IC = 0

V

FE

h

IC = 5 mA, VCE = 6 V

C = 20 mA, VCE = 6 V

I

V

CEsat – 0.16 0.4

C = 30 mA, IB = 3 mA

I

Base-emitter voltage

C = 5 mA, VCE = 6 V

I

V

BE – 0.78 –

min. typ. max.

40
40

90
100

250
–

UnitValues

VCollector-emitter breakdown voltage

nACollector-base cutoff current

µAEmitter-base cutoff current

–DC current gain

VCollector-emitter saturation voltage

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BFQ 71

Parameter Symbol

AC Characteristics

T

f

C = 5 mA, VCE = 6 V, f = 200 MHz

I

C = 20 mA, VCE = 6 V, f = 200 MHz

I

C

cb – 0.46 0.6

CB = 6 V, VBE = vbe = 0, f = 1 MHz

V

C

Collector-emitter capacitance

CE = 6 V, VBE = vbe = 0, f = 1 MHz

V

Input capacitance

EB = 0.5 V, IC = ic = 0, f = 1 MHz

V

Output capacitance

CE = 6 V, VBE = vbe = 0, f = 1 MHz

V

ce – 0.4 –

C

ibo – 1.2 –

C

obs – 0.86 1.2

F

I

C = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75 Ω
C = 2 mA, VCE = 6 V, f = 800 MHz, ZS = ZSopt

I
IC = 3 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt

min. typ. max.

–
4

–
–
–

4.2

5.2

1.4

1.5

3.2

–
–

2.2
3
–

UnitValues

GHzTransition frequency

pFCollector-base capacitance

dBNoise figure

Power gain

C = 2 mA, VCE = 6 V, f = 800 MHz,

I

S = ZSopt, ZL = ZLopt

Z

Transducer gain

C = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50 Ω

I

two-tone intermodulation test

C = 15 mA, VCE = 10 V, dIM = 60 dB,

I

1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω

f

C = 15 mA, VCE = 10 V, f = 800 MHz

I

Gpe –15–

2

I S

21e I

– 13.4 –

Vo1 = Vo2 – 110 –

IP

3 – 23.5 –

mVLinear output voltage

dBmThird order intercept point

BFQ 71

Total power dissipation Ptot = f (TA*; TS)

*Package mounted on alumina

Transition frequency fT = f (IC)

CE = 6 V, f = 200 MHz

V

Collector-base capacitance C

BE = vbe = 0, f = 1 MHz

V

cb = f (VCB)

BFQ 71

Common Emitter Noise Parameters

Γ

f

Fmin Gp(Fmin) RN NF50 Ω Gp(F50Ω)

GHz dB dB MAG ANG Ω –dBdB

IC = 2 mA, VCE = 6 V, Z0 = 50 Ω

opt

0.01 1.1 – (Z

IC = 5 mA, VCE = 10 V, Z0 = 50 Ω

0.01

0.8

2.0

1.3

1.6

3.1

–

15.3
9

0.29

0.12

Noise figure F = f (ZS)

CE = 6 V, f = 10 MHz

V

S = 150 Ω) – – 1.6 –

S = 100 Ω)

(Z

56

124.5

–

18.5
30

–

0.24

0.67

1.7

1.8
–

–

14.8
–

BFQ 71

Circles of constant noise figure F = f (ZS)
and available power gain G

C = 5 mA, VCE = 10 V, f = 800 MHz

I

av = f (ZS)

Noise figure F = f (IC)
Power gain G = f (I

CE = 10 V, f = 800 MHz, ZLopt (G)

V

C)

Circles of constant noise figure F = f (Z
and available power gain G

C = 5 mA, VCE = 10 V, f = 2 GHz

I

av = f (ZS)

Noise figure F = f (I

S)

Power gain G = f (I

CE = 10 V, f = 2 GHz, ZLopt (G)

V

C)

C)