Siemens BFQ29P Datasheet
NPN Silicon RF Transistor BFQ 29P
● For low-noise IF and broadband amplifiers up to
1 GHz at collector currents from 1 mA to 20 mA.
● CECC-type available: CECC 50002/258.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
BFQ 29P Q62702-F659KC SOT-23
Marking
(tape and reel)
Pin Configuration
1 2 3
B E C
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
Collector-base voltage V
CE0 15 V
CB0 20
Emitter-base voltage VEB0 3
Collector current I
C 30 mA
Base current IB 4
Total power dissipation, T
S ≤ 65 ˚C
3)
Ptot 280 mW
Junction temperature Tj 150 ˚C
Ambient temperature range T
A – 65 … + 150
1)
Storage temperature range T
stg – 65 … + 150
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
2)
3)
Rth JA ≤ 385 K/W
Rth JS ≤ 305
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BFQ 29P
BFQ 29P
Parameter Symbol
DC Characteristics
V
(BR)CE0 15 – –
C = 1 mA, IB = 0
I
CB0
I
CB = 10 V, IE = 0
V
CB = 20 V, IE = 0
V
I
EB0 – – 100
EB = 3 V, IC = 0
V
FE
h
IC = 3 mA, VCE = 6 V
C = 10 mA, VCE = 6 V
I
V
CEsat – 0.1 0.4
C = 20 mA, IB = 1 mA
I
min. typ. max.
–
–
50
50
–
–
–
140
0.05
10
250
–
UnitValues
VCollector-emitter breakdown voltage
µACollector-base cutoff current
µAEmitter-base cutoff current
–DC current gain
VCollector-emitter saturation voltage
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BFQ 29P
BFQ 29P
Parameter Symbol
AC Characteristics
T
f
C = 3 mA, VCE = 6 V, f = 200 MHz
I
C = 20 mA, VCE = 6 V, f = 200 MHz
I
C
cb – 0.5 0.65
CB = 10 V, VBE = vbe = 0, f = 1 MHz
V
C
Collector-emitter capacitance
CE = 10 V, VBE = vbe = 0, f = 1 MHz
V
Input capacitance
EB = 0.5 V, IC = ic = 0, f = 1 MHz
V
Output capacitance
CE = 10 V, VBE = vbe = 0, f = 1 MHz
V
ce – 0.28 –
C
ibo – 1.35 –
C
obs – 0.8 –
F
I
C = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75 Ω
C = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50 Ω
I
min. typ. max.
–
3.6
–
–
2.7
5
0.9
1.5
–
–
1.2
–
UnitValues
GHzTransition frequency
pFCollector-base capacitance
dBNoise figure
Power gain
C = 20 mA, VCE = 6 V, f = 800 MHz,
I
0 = 50 Ω, ZL = ZLopt
Z
Transducer gain
C = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50 Ω
I
two-tone intermodulation test
C = 20 mA, VCE = 6 V, dIM = 60 dB,
I
1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω
f
C = 20 mA, VCE = 6 V, f = 800 MHz
I
Gpe –14–
2
21e I
I S
o1 = Vo2 – 180 –
V
IP
3 –28–
–11–
mVLinear output voltage
dBmThird order intercept point
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