Siemens BFP520 Datasheet

BFP 520

Semiconductor Group

Sep-09-19981

SIEGET45

NPN Silicon RF Transistor
Preliminary data

• For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
Outstanding

G

a

= 20 dB

Noise Figure F = 0.95 dB

• For oscillators up to 15 GHz

• Transition frequency

f

T

= 45 GHz

• Gold metalization for high reliability

• SIEGET  45 - Line

Siemens Grounded Emitter Transistor
45 GHz

f

T

- Line

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package

BFP 520 APs Q62702-F1794 1 = B 2 = E 3 = C 4 = E SOT-343

Maximum Ratings
Parameter Symbol Value Unit

Collector-emitter voltage

V

CEO

2.5 V

Collector-base voltage

V

CBO

12 V

Emitter-base voltage

V

EBO

1 V

Collector current

I

C

40 mA

Base current

I

B

4 mA

Total power dissipation,

T

S

≤ 105 °C

P

tot

100 mW

Junction temperature

T

j

150 °C

Ambient temperature

T

A

-65 ...+150 °C

Storage temperature

T

st

g

-65 ...+150 °C

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤ 450

K/W

1) TS is measured on the collector lead at the soldering point to the pcb

Semiconductor Group 1 1998-11-01

BFP 520

Semiconductor Group

Sep-09-19982

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

I

C

= 1 mA,

I

B

= 0

V

(BR)CEO

2.5 3 3.5 V

Collector-base cutoff current

V

CB

= 5 V,

I

E

= 0

I

CBO

- - 200 nA

Emitter-base cutoff current

V

EB

= 1.5 V,

I

C

= 0

I

EBO

- - 35 nA

DC current gain

I

C

= 20 mA,

V

CE

= 4 V

h

FE

50 80 150

-

AC characteristics

- GHz- 45

f

T

Transition frequency

I

C

= 30 mA,

V

CE

= 2 V, f = 2 GHz

- pF0.06-

C

cb

Collector-base capacitance

V

CB

= 2 V, f = 1 MHz

- pF

C

ce

0.3-

Collector-emitter capacitance

V

CE

= 2 V, f = 1 MHz

-

Emitter-base capacitance

V

EB

= 0.5 V, f = 1 MHz

pF

C

eb

0.35-

-

F

-

Noise figure

I

C

= 2 mA,

V

CE

= 2 V,

Z

S

=

Z

Sopt

,

f

= 1.8 GHz

dB0.95

- dB23-

G

ms

Power gain 1)

I

C

= 20 mA,

V

CE

= 2 V,

Z

S

=

Z

Sopt

,

Z

L

=

Z

Lopt

,

f

= 1.8 GHz

- dB

|

S

21

|

2

Insertion power gain

I

C

= 20 mA,

V

CE

= 2 V, f = 1.8 GHz,

Z

S

=

Z

L

= 50Ω

21-

-

-

Third order intercept point at output

V

CE

= 2 V, f = 1.8 GHz,

Z

S

=

Z

Sopt

,

Z

L

=

Z

Lopt

,

I

C

= 20 mA

I

C

= 7 mA

dBm

IP

3

25

17

-

-

1dB compression point

V

CE

= 2 V, f = 1.8 GHz,

Z

S

=

Z

Sopt

,

Z

L

=

Z

Lopt

,

I

C

= 20 mA

I

C

= 7 mA

dBm

-

-

P

-1dB

-

-

12

5

1)

G

ms

= |

S

21

/

S

12

|

2)

G

ma

= |

S

21

/

S

12

| (k-(k2-1)

1/2

)

Semiconductor Group 2 1998-11-01

BFP 520

Semiconductor Group

Sep-09-19983

Common Emitter S-Parameters

f S

11

S

21

S

12

S

22

GHz MAG ANG MAG ANG MAG ANG MAG ANG

V

CE

= 2 V, /C = 20 mA

0.01

0.1

0.5
1
2
3
4
5
6

0.7244

0.7251

0.6368

0.4768

0.2816

0.225

0.2552

0.3207

0.3675

-0.7

-8.4

-40.7

-73.6

-123.8

-166

156.2

133.6

118.7

32.273

31.637

27.293

19.6

11.02

7.48

5.636

4.488

3.683

178.6

171.4

140.7

113.5

84.9

67.6
53

39.7

27.5

0.0007

0.0041

0.0194

0.0351

0.00574

0.0788

0.0994

0.1177

0.1343

69.4

92.8

75.9

66.5

56.3

49.2

41.5

32.9

24.7

0.9052

0.9363

0.8523

0.6496

0.3818

0.2407

0.1544

0.095

0.0545

1.2

-4.4

-26.7

-46

-64.6

-73.6

-95.3

-128.9

177.6

Common Emitter Noise Parameters

f F

min

1)

G

a

1)

Γ

opt

R

N

r

n

F

50Ω

2)

|

S

21

|

2 2)

GHz dB dB MAG ANG Ω - dB dB

V

CE

= 2 V,

I

C

= 2 mA

0.9

1.8

2.4
3
4
5
6

0.72

0.95

1.07

1.3

1.35

1.7

1.95

21.5
20
16

14.5

11.6

9.5
8

0.64

0.49

0.45

0.4

0.26

0.14

0.12

14
30
41
54
82

128

151

21.5
19
18

16.5

12.5

9

8

0.43

0.38

0.36

0.33

0.25

0.18

0.16

1.75

1.55

1.6

1.7

1.6

1.85

1.95

16.1

15.14

14.07

13.13

11.49

9.87

8.28

V

CE

= 2 V,

I

C

= 5 mA

0.9

1.8

2.4
3
4
5
6

0.89

1.08

1.12

1.32

1.35

1.6

1.8

22

20.5
18

16.2

13.5

11.5

10.5

0.49

0.38

0.34

0.29

0.156

0.08

0.07

12
22
33
45
71

120

150

16
14
14

13.5
11
10

8

0.32

0.28

0.28

0.27

0.22

0.2

0.16

1.5

1.38

1.4

1.5

1.45

1.65

1.8

21.94

19.34

17.54

16.01

13.82

11.93

10.23

1) Input matched for minimum noise figure, output for maximum gain 2)

Z

S

=

Z

L

= 50Ω

For more and detailed S- and Noise-parameters please contact your local Siemens
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:
http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 3 1998-11-01