Siemens BFP490 Datasheet
BFP 490
Semiconductor Group
Sep-09-19981
SIEGET25
NPN Silicon RF Transistor
Preliminary data
• For high power amplifiers
• Compression point
P
-1dB
= 26.5 dBm at 1.8 GHz
maxim. available Gain
G
ma
= 9.5 dB at 1.8 GHz
• Transition frequency
f
T
> 17 GHz
• Gold metalization for high reliability
• SIEGET 25 - Line
Siemens Grounded Emitter Transistor
25 GHz
f
T
- Line
VPW05980
1
2
3
5
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 490 AOs Q62702-F1721 1 = B 2 = E 3 = C 4 = C SCT-5955 = E
Maximum Ratings
Parameter Symbol UnitValue
VCollector-emitter voltage 4.5
V
CEO
Collector-base voltage
V
CBO
15
Emitter-base voltage
V
EBO
1.5
Collector current
I
C
600 mA
Base current
I
B
60
Total power dissipation,
T
S
≤ 85 °C
P
tot
1000 mW
Junction temperature
T
j
150 °C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
st
g
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 65
K/W
1) TS is measured on the emitter lead at the soldering point
mounted on alumina 15 mm x 16,7 mm x 0.7 mm
Semiconductor Group 1 1998-11-01
BFP 490
Semiconductor Group
Sep-09-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
4.5 5 - V
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
I
CBO
- - 1800 nA
Emitter-base cutoff current
V
EB
= 1.5 V,
I
C
= 0
I
EBO
- - 400 µA
DC current gain
I
C
= 200 mA,
V
CE
= 3 V
h
FE
50 90 -
-
AC characteristics
Transition frequency
I
C
= 300 mA,
V
CE
= 3 V, f = 0.2 GHz
I
C
= 300 mA,
V
CE
= 3 V, f = 0.5 GHz
f
T
-
13
17.5
15
-
-
GHz
Collector-base capacitance
V
CB
= 2 V, f = 1 MHz
C
cb
- 3.7 4.7 pF
Collector-emitter capacitance
V
CE
= 2 V, f = 1 MHz
C
ce
- 6.3 -
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
- 10.5 -
Noise figure
I
C
= 100 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
F
- 3.3 - dB
Power gain 2)
I
C
= 200 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
G
ma
- 9 - dB
Insertion power gain
I
C
= 200 mA,
V
CE
= 2 V, f = 0.5 GHz,
Z
S
=
Z
L
= 50Ω
|
S
21
|
2
- 8.5 -
Third order intersept point
I
C
= 300 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
IP
3
- 35 - dBm
1dB Compression point
I
C
= 300 mA,
V
CE
= 3 V, f = 1.8 GHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
P
-1dB
- 26.5 -
2)
G
ma
= |
S
21
/
S
12
| (k-(k2-1)
1/2
)
Semiconductor Group 2 1998-11-01
BFP 490
Semiconductor Group
Sep-09-19983
Common Emitter S-Parameters
f S
11
S
21
S
12
S
22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
V
CE
= 2V,
I
C
= 150mA
0.01
0.1
0.3
0.5
0.9
1
1.5
2
3
0.648
0.916
0.921
0.92
0.921
0.919
0.928
0.926
0.924
-159.8
-178.5
173.7
168.2
159.1
157
147.1
138.8
122.8
75.95
12.96
4.28
2.52
1.36
1.22
0.8
0.61
0.43
144.1
94.9
83.7
77.3
68.1
65.7
55.6
47.1
29.1
0.0053
0.0095
0.0133
0.0188
0.0295
0.0321
0.045
0.0574
0.0811
53.8
25.5
43.6
51.9
56.1
55.7
52.7
48.1
36.6
0.7723
0.8743
0.8761
0.8777
0.8825
0.9944
0.8861
0.8878
0.884
-77.6
-167.1
-179.6
175.7
169.5
168.2
162.5
157.7
146.7
V
CE
= 2V,
I
C
= 300mA
0.01
0.1
0.3
0.5
0.9
1
1.5
2
3
0.7274
0.9158
0.9215
0.9193
0.9224
0.9201
0.9373
0.9265
0.9204
-172.3
-179.6
173.1
167.9
158.9
156.7
147
138.6
122.7
63.82
14.24
4.735
2.788
1.515
1.358
0.891
0.672
0.47
153.8
98.6
85.3
78.7
69.8
67.5
57.7
49.4
31.7
0.003
0.007
0.0119
0.0179
0.0294
0.0324
0.0454
0.0581
0.0819
38.4
34.6
53.6
59.4
60.8
59.8
55.5
50.3
37.9
0.4321
0.8696
0.8834
0.8879
0.892
0.8952
0.8953
0.8968
0.8928
-91.1
-167
-179.5
175.8
169.5
168.1
162.2
157.5
146.5
For more and detailed S- parameters please contact your local Siemens
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:
http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group 3 1998-11-01
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