Siemens BFP405 Datasheet
BFP 405
Semiconductor Group
Sep-09-19981
SIEGET25
NPN Silicon RF Transistor
• For low current applications
• For oscillators up to 12 GHz
• Noise figure
F
= 1.15 dB at 1.8 GHz
outstanding
G
ms
= 22 dB at 1.8 GHz
• Transition frequency
f
T
= 25 GHz
• Gold metalization for high reliability
• SIEGET 25 - Line
Siemens Grounded Emitter Transistor
25 GHz
f
T
- Line
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 405 ALs Q62702-F1592 1 = B 2 = E 3 = C 4 = E SOT-343
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage
V
CEO
V4.5
V
CBO
15Collector-base voltage
V
EBO
Emitter-base voltage 1.5
Collector current 12 mA
I
C
I
B
1Base current
mW55
Total power dissipation,
T
S
≤ 120 °C
P
tot
Junction temperature
T
j
150 °C
T
A
-65 ...+150Ambient temperature
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 530
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group 1 1998-11-01
BFP 405
Semiconductor Group
Sep-09-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
5 6.54.5
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
- 150-
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
I
CBO
nA
- 15 µA-
Emitter-base cutoff current
V
EB
= 1.5 V,
I
C
= 0
I
EBO
90
DC current gain
I
C
= 5 mA,
V
CE
= 4 V
h
FE
150
-
50
AC characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 3 V, f = 2 GHz
f
T
20 25 - GHz
Collector-base capacitance
V
CB
= 2 V, f = 1 MHz
C
cb
- 0.05 0.08 pF
Collector-emitter capacitance
V
CE
= 2 V, f = 1 MHz
C
ce
- 0.28 -
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
- 0.29 -
Noise figure
I
C
= 2 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
F
- 1.15 1.4 dB
Power gain 1)
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
G
ms
- 22 -
Insertion power gain
I
C
= 5 mA,
V
CE
= 2 V, f = 1.8 GHz,
Z
S
=
Z
L
= 50Ω
|
S
21
|
2
14 17 - dB
Third order intersept point
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
IP
3
- 15 - dBm
1dB Compression point
I
C
= 5 mA,
V
CE
= 2 V, f = 1.8 GHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
P
-1dB
- 5 -
1)
G
ms
= |
S
21
/
S
12
|
Semiconductor Group 2 1998-11-01
BFP 405
Semiconductor Group
Sep-09-19983
Common Emitter S-Parameters
f S
11
S
21
S
12
S
22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
V
CE
= 2V,
I
C
= 5mA
0.1
0.5
1
2
3
4
6
8
9
10
11
12
0.841
0.791
0.682
0.449
0.304
0.239
0.303
0.464
0.549
0.631
0.666
0.693
-5.2
-25.4
-48.7
-88.6
-126.1
-171.1
129.3
91.4
77.9
71
67.6
63.4
13.52
12.76
11.25
8.04
5.91
4.63
3.13
2.22
1.93
1.65
1.47
1.23
174.9
154.6
133.3
100.3
77.4
58.9
28
-1.5
-15.5
-27.5
-38.2
-49.5
0.0033
0.0161
0.0290
0.0479
0.0639
0.799
0.1104
0.118
0.129
0.136
0.145
0.155
88.9
77.5
67.9
55.4
49.2
43.2
30.2
13.6
5.1
-2.2
-8.5
-15.3
0.986
0.956
0.873
0.709
0.594
0.509
0.386
0.251
0.153
0.069
0.127
0.187
-2.5
-12.6
-22.7
-36.8
-44.7
-55.5
-73.5
-92.2
106.6
-166.6
137.2
75.6
Common Emitter Noise Parameters
f F
min
1)
G
a
1)
Γ
opt
R
N
r
n
F
50Ω
2)
|
S
21
|
2 2)
GHz dB dB MAG ANG Ω - dB dB
V
CE
= 2V,
I
C
= 2mA
0.9
1.8
2.4
3.0
4
5
6
0.9
1.15
1.35
1.46
1.62
1.75
2.15
21.2
18.2
15.5
14.5
11.9
9.3
8.1
0.54
0.46
0.41
0.34
0.26
0.17
0.13
14
27
38
55
80
117
180
21
19
18
17
12.5
11
14
0.42
0.38
0.36
0.34
0.25
0.22
0.28
1.8
1.8
1.8
1.8
1.8
1.9
2.2
16.1
15
14
12.9
11.3
9.7
8.2
1) Input matched for minimum noise figure, output for maximum gain 2)
Z
S
=
Z
L
= 50Ω
For more and detailed S- and Noise-parameters please contact your local Siemens
distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:
http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group 3 1998-11-01
Loading...