Siemens BFP26, BFP23 Datasheet

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PNP Silicon Transistors BFP 23
with High Reverse Voltage BFP 26

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary types: BFP 22, BFP 25 (NPN)

1

2

3

Type Ordering Code

BFP 23
BFP 26

Marking

(tape and reel)

– TO-92

Q62702-F622

Pin Configuration

1 2 3

E B C

Package

Q62702-F722

Maximum Ratings
Parameter Symbol

BFP 23

Collector-emitter voltage V

CE0 200 V

Collector-base voltage VCB0 200
Emitter-base voltage V

EB0

Collector current IC mA
Peak collector current I
Base current I

CM

B

Peak base current IBM
Total power dissipation, TC =66 ˚C Ptot mW
Junction temperature T

j ˚C

Values

BFP 26

300
300

6
200
500
100
200
625
150

Unit

1)

Storage temperature range T

stg – 65 … + 150

Thermal Resistance

Junction - ambient Rth JA ≤ 200 K/W
Junction - case

1)

For detailed information see chapter Package Outlines.

2)

Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

2)

Rth JC ≤ 135

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BFP 23

BFP 26

UnitValuesParameter Symbol

min. typ. max.

C = 1 mA BFP 23

I

BFP 26

Collector-base breakdown voltage

C = 100 µA BFP 23

I

BFP 26

Emitter-base breakdown voltage

E = 100 µA

I

Collector-base cutoff current

VCB = 160 V BFP 23

CB = 250 V BFP 26

V

CB = 160 V, TA = 150 ˚C BFP 23

V

CB = 250 V, TA = 150 ˚C BFP 26

V

EB = 3 V

V

C = 1 mA, VCE = 10 V

I
I

C = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

1)

1)

BFP 23
BFP 26

Collector-emitter saturation voltage

1)

IC = 20 mA, IB = 2 mA BFP 23

BFP 26

Base-emitter saturation voltage

1)

IC = 20 A, IB = 2 mA

(BR)CE0

V

200
300

(BR)CB0

V

200
300

V

(BR)EB0 6––

I

CB0

–
–
–
–

I

EB0 – – 100

FE

h

25
40
30
25

CEsat

V

–
–

V

BEsat – – 0.9

–
–

–
–

–
–
–
–

–
–
–
–

–
–

–
–

–
–

100
100
20
20

–
–
–
–

0.4

0.5

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nAEmitter-base cutoff current

–DC current gain

V

AC characteristics

C = 20 mA, VCE = 10 V, f = 20 MHz

I

CB = 30 V, f = 1 MHz

V

1)

Pulse test conditions: t ≤ 300 µs, D ≤ 2%.

f

T –70–

C

obo – 1.5 –

MHzTransition frequency

pFOutput capacitance