Siemens BFP193 Datasheet
BFP 193
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
•
f
= 8GHz
T
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 193 RCs Q62702-F1282 1 = C 2 = E 3 = B 4 = E SOT-143
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
≤ 72 °C
S
Junction temperature
Ambient temperature
Storage temperature
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
12 V
20
20
2
80 mA
10
mW
580
150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
135 K/W
1)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Dec-13-1996
BFP 193
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-emitter cutoff current
V
= 20 V,
CE
V
BE
= 0
Collector-base cutoff current
V
= 10 V,
CB
I
E
= 0
Emitter-base cutoff current
V
= 1 V,
EB
I
C
= 0
DC current gain
I
= 30 mA,
C
V
CE
= 8 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
V
12 - -
µA
- - 100
nA
- - 100
µA
- - 1
-
50 100 200
Semiconductor Group 2 Dec-13-1996
BFP 193
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
= 50 mA,
C
V
= 8 V, f = 500 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
V
= 10 V, f = 1 MHz
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
I
= 10 mA,
C
f
= 900 MHz
V
CE
= 8 V,
Z
=
S
Z
Sopt
f
C
C
C
F
T
GHz
6 8 -
cb
pF
- 0.6 0.9
ce
- 0.25 -
eb
- 1.8 dB
-
1.3
-
f
= 1.8 GHz
V
2)
CE
Power gain
I
= 30 mA,
C
Z
=
Z
L
Lopt
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
I
= 30 mA,
C
f
= 900 MHz
f
= 1.8 GHz
2)
G
= |
ma
S
21
V
/
CE
S
= 8 V,
= 8 V,
| (k-(k2-1)
12
-
G
ma
Z
=
Z
S
Sopt
-
-
S
21e
2
|
|
Z
=
Z
S
L
= 50
Ω
-
-
1/2
)
2.1
17.5
11.5
14.5
8.5
-
-
-
-
-
Semiconductor Group 3 Dec-13-1996
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