Siemens BFP183R Datasheet
BFP 183R
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 28 mA
• fT = 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 183R RHs Q62702-F1594 1 = E 2 = C 3 = E 4 = B SOT-143R
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
≤ 76 °C
S
Junction temperature
Ambient temperature
Storage temperature
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
12 V
20
20
2
65 mA
5
mW
250
150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
295 K/W
1)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Jan-21-1997
BFP 183R
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-emitter cutoff current
V
= 20 V,
CE
V
BE
= 0
Collector-base cutoff current
V
= 10 V,
CB
I
E
= 0
Emitter-base cutoff current
V
= 1 V,
EB
I
C
= 0
DC current gain
I
= 15 mA,
C
V
CE
= 8 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
V
12 - -
µA
- - 100
nA
- - 100
µA
- - 1
-
50 100 200
Semiconductor Group 2 Jan-21-1997
BFP 183R
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
= 25 mA,
C
V
= 8 V, f = 500 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
V
= 10 V, f = 1 MHz
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
I
= 5 mA,
C
f
= 900 MHz
V
CE
= 8 V,
Z
=
Z
S
Sopt
f
C
C
C
F
T
GHz
6 8 -
cb
pF
- 0.35 0.5
ce
- 0.27 -
eb
- 1 dB
-
1.2
-
f
= 1.8 GHz
V
V
1)
CE
=
2)
CE
=
Power gain
I
= 15 mA,
C
Z
=
Z
S
Sopt, ZL
Power gain
I
= 15 mA,
C
Z
=
Z
S
Sopt, ZL
Transducer gain
I
= 15 mA,
C
f
= 900 MHz
f
= 1.8 GHz
1)
G
ms
2)
G
= |
ma
= |
S
S
21
21
V
/
/
CE
S
S
= 8 V, f = 900 MHz
Z
Lopt
= 8 V, f = 1.8 GHz
Z
Lopt
= 8 V,
|
12
| (k-(k2-1)
12
Z
=
Z
= 50
S
L
1/2
)
Ω
G
G
|
S
ms
ma
21e
-
- 21 -
- 14 -
2
|
-
-
2
16.5
11
-
-
-
Semiconductor Group 3 Jan-21-1997
Loading...