Siemens BFP181R Datasheet

BFP 181R

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA

•

f

= 8GHz

T

F = 1.45dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFP 181R RFs Q62702-F1685 1 = E 2 = C 3 = E 4 = B SOT-143R

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation

T

≤ 75 °C

S

Junction temperature Ambient temperature Storage temperature

V V V V I I P

T T T

C B

CEO CES CBO EBO

tot

j A stg

12 V 20 20

2

20 mA

2

mW 175 150 °C

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤

430 K/W

1)

T

is measured on the collector lead at the soldering point to the pcb.

S

Semiconductor Group 1 Jan-21-1997

BFP 181R

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-emitter cutoff current

V

= 20 V,

CE

V

BE

= 0

Collector-base cutoff current

V

= 10 V,

CB

I

E

= 0

Emitter-base cutoff current

V

= 1 V,

EB

I

C

= 0

DC current gain

I

= 5 mA,

C

V

CE

= 8 V

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

V

12 - -

µA

- - 100 nA

- - 100 µA

- - 1

-

50 100 200

Semiconductor Group 2 Jan-21-1997

BFP 181R

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

I

= 10 mA,

C

V

= 8 V, f = 500 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 2 mA,

C

f

= 900 MHz

V

CE

= 8 V,

Z

=

Z

S

Sopt

f

C

F

T

GHz

6 8 -

cb

pF

- 0.21 0.4

ce

- 0.27 -

eb

- 0.32 dB

-

1.45

-

f

= 1.8 GHz

V

1)

CE

Power gain

I

= 5 mA,

C

Z

=

Z

L

Lopt

f

= 900 MHz

f

= 1.8 GHz

Transducer gain

I

= 5 mA,

C

f

= 900 MHz

f

= 1.8 GHz

1)

G

ms

= |

S

V

21

CE

/

S

= 8 V,

|

12

-

G

ms

Z

=

Z

S

Sopt

-

S

21e

2

|

Z

=

Z

S

= 50 Ω

L

-

1.8

20

16.5

11.5

-

Semiconductor Group 3 Jan-21-1997