Siemens BFP136W Datasheet

BFP 136W

NPN Silicon RF Transistor

• For power amplifier in DECT and PCN systems

• f

= 5.5GHz

T

• Gold metalization for high reliability

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFP 136W PAs Q62702-F1575 1 = E 2 = C 3 = E 4 = B SOT-343

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation

T

≤ 60 °C

S

Junction temperature
Ambient temperature
Storage temperature

V
V
V
V
I
I
P

T
T
T

C
B

CEO
CES
CBO
EBO

tot

j
A
stg

12 V
20
20

2

150 mA

20

mW

1000

150 °C

- 65 ... + 150

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤

90 K/W

1)

T

is measured on the collector lead at the soldering point to the pcb.

S

Semiconductor Group 1 Jan-20-1997

BFP 136W

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-emitter cutoff current

V

= 20 V,

CE

V

BE

= 0

Collector-base cutoff current

V

= 10 V,

CB

I

E

= 0

Emitter-base cutoff current

V

= 1 V,

EB

I

C

= 0

DC current gain

I

= 80 mA,

C

V

CE

= 5 V

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

V

12 - -

µA

- - 100
nA

- - 50
µA

- - 1

-

50 100 200

Semiconductor Group 2 Jan-20-1997

BFP 136W

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

I

= 80 mA,

C

V

= 5 V, f = 500 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 30 mA,

C

f

= 900 MHz

V

CE

= 5 V,

Z

=

S

Z

Sopt

f

C

C

C

F

T

GHz

4 5.5 -

cb

pF

- 1.7 2.5

ce

- 0.7 -

eb

- 6.8 ­dB

-

2

-

f

= 1.8 GHz

V

2)

CE

= 5 V,

Power gain

I

= 80 mA,

C

Z

=

Z

L

Lopt

f

= 900 MHz

f

= 1.8 GHz

Transducer gain

I

= 80 mA,

C

f

= 900 MHz

f

= 1.8 GHz

V

CE

= 5 V,

Third order intersept point

I

= 80 mA,

C

Z

=

Z

S

2)

G

ma

Sopt, ZL

= |

S

V

= 5 V, f = 1.8 MHz

CE

=

Z

Lopt

/

S

21

| (k-(k2-1)

12

-

G

ma

Z

=

Z

S

Sopt

-

-

S

21e

2

|

|

Z

=

Z

= 50 Ω

S

L

-

-

IP

3

3.3

15.5

9.5

9
3

-

-

-

-

­dBm

- 33 -

1/2

)

Semiconductor Group 3 Jan-20-1997