Siemens BFN38, BFN36 Datasheet

NPN Silicon High-Voltage Transistors BFN 36
BFN 38
Suitable for video output stages in TV sets
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN 37, BFN 39 (PNP)
Type Ordering Code
BFN 36 BFN 38
Marking
BFN 36 BFN 38
(tape and reel)
Q62702-F1246 Q62702-F1303
Pin Configuration
1 2 3 4
B C E C
Package
SOT-223
Maximum Ratings Parameter Symbol
BFN 36
Collector-emitter voltage V
CE0 250 V
Collector-base voltage VCB0 250 Emitter-base voltage V
EB0
Collector current IC mA Peak collector current I Base current I
CM
B
Peak base current IBM Total power dissipation, TS =124 ˚C Ptot W
Values
BFN 38
300 300
5 200 500 100 200
1.5
Unit
Junction temperature T Storage temperature range T
j ˚C stg – 65 … + 150
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA 72 K/W
th JS 17
R
150
5.91
Electrical Characteristics
I
I I I I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BFN 36
BFN 38
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA, IB = 0 BFN 36
BFN 38
Collector-base breakdown voltage
C = 100 µA, IB = 0 BFN 36
(BR)CB0
V
BFN 38
Emitter-base breakdown voltage
E = 100 µA, IB = 0
Collector-base cutoff current
V
(BR)EB0 5––
I
CB0
VCB = 200 V BFN 36
CB = 250 V BFN 38
V
CB = 200 V, TA = 150 ˚C BFN 36
V
CB = 250 V, TA = 150 ˚C BFN 38
V
EB = 4 V, IC = 0
V
DC current gain
C = 1 mA, VCE = 10 V C = 10 mA, VCE = 10 V C = 30 mA, VCE = 10 V BFN 36 C = 30 mA, VCE = 10 V BFN 38
Collector-emitter saturation voltage
C = 20 mA, IB = 2 mA BFN 36
I
EB0 100
BFN 38
Base-emitter saturation voltage
C = 20 mA, IB = 2 mA
VBEsat 0.9
250 300
250 300
– – – –
25 40 40 30
– –
– –
– –
– – – –
– – – –
– –
– –
– –
100 100 20 20
– – – –
0.4
0.5
VCollector-emitter breakdown voltage
nA nA
µA µA
nAEmitter-base cutoff current
hFE
VVCEsat
AC characteristics
f
T –70–
C = 20 mA, VCE = 10 V, f = 100 MHz
CB = 30 V, f = 1 MHz
V
C
obo 1.5
MHzTransition frequency
pFOutput capacitance
1)
Pulse test conditions: t 300 µs, D = 2 %.
Semiconductor Group 2
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