Siemens BFN27, BFN25 Datasheet

PNP Silicon High-Voltage Transistors BFN 25

BFN 27

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: BFN 24, BFN 26 (NPN)

Type Ordering Code

BFN 25
BFN 27

Marking

FKs
FLs

(tape and reel)

Q62702-F1066
Q62702-F977

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

BFN 25 BFN 27

Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0

250 300
250 300

5
Collector current IC mA200
Peak collector current I

CM 500

Base current IB 100
Peak base current I
Total power dissipation, T

S = 74 ˚C Ptot mW

BM 200

360

1)

Junction temperature Tj ˚C
Storage temperature range T

stg

150

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 280 K/W

Junction - soldering point Rth JS ≤ 210

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I
I
I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BFN 25

BFN 27

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 1 mA BFN 25

BFN 27

Collector-base breakdown voltage

C = 100 µA BFN 25

(BR)CB0

V

BFN 27

V

Emitter-base breakdown voltage

E = 100 µA

Collector-base cutoff current

(BR)EB0 5––

I

CB0

VCB = 200 V BFN 25

CB = 250 V BFN 27

V

CB = 200 V, TA = 150 ˚C BFN 25

V

CB = 250 V, TA = 150 ˚C BFN 27

V

EB = 3 V

V

C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V

1)

1)

BFN 25

I

EB0 – – 100

FE

h

BFN 27

Collector-emitter saturation voltage

C = 20 mA, IB = 2 mA BFN 25

1)

VCEsat

BFN 27

Base-emitter saturation voltage

C = 20 mA, IB = 2 mA

1)

VBEsat – – 0.9

250
300

250
300

–
–
–
–

25
40
40
30

–
–

–
–

–
–

–
–
–
–

–
–
–
–

–
–

–
–

–
–

100
100
20
20

–
–
–
–

0.4

0.5

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nAEmitter-base cutoff current

–DC current gain

V

AC characteristics

f

T – 100 –

C = 20 mA, VCE = 10 V, f = 20 MHz

CB = 30 V, f = 1 MHz

V

C

obo – 2.5 –

MHzTransition frequency

pFOutput capacitance

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2