Siemens BFN27, BFN25 Datasheet
PNP Silicon High-Voltage Transistors BFN 25
BFN 27
● Suitable for video output stages in TV sets
and switching power supplies
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BFN 24, BFN 26 (NPN)
Type Ordering Code
BFN 25
BFN 27
Marking
FKs
FLs
(tape and reel)
Q62702-F1066
Q62702-F977
Pin Configuration
1 2 3
B E C
Package
SOT-23
Maximum Ratings
Parameter Symbol Values Unit
BFN 25 BFN 27
Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0
250 300
250 300
5
Collector current IC mA200
Peak collector current I
CM 500
Base current IB 100
Peak base current I
Total power dissipation, T
S = 74 ˚C Ptot mW
BM 200
360
1)
Junction temperature Tj ˚C
Storage temperature range T
stg
150
– 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 280 K/W
Junction - soldering point Rth JS ≤ 210
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BFN 25
BFN 27
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA BFN 25
BFN 27
Collector-base breakdown voltage
C = 100 µA BFN 25
(BR)CB0
V
BFN 27
V
Emitter-base breakdown voltage
E = 100 µA
Collector-base cutoff current
(BR)EB0 5––
I
CB0
VCB = 200 V BFN 25
CB = 250 V BFN 27
V
CB = 200 V, TA = 150 ˚C BFN 25
V
CB = 250 V, TA = 150 ˚C BFN 27
V
EB = 3 V
V
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V
1)
1)
BFN 25
I
EB0 – – 100
FE
h
BFN 27
Collector-emitter saturation voltage
C = 20 mA, IB = 2 mA BFN 25
1)
VCEsat
BFN 27
Base-emitter saturation voltage
C = 20 mA, IB = 2 mA
1)
VBEsat – – 0.9
250
300
250
300
–
–
–
–
25
40
40
30
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
20
20
–
–
–
–
0.4
0.5
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter-base cutoff current
–DC current gain
V
AC characteristics
f
T – 100 –
C = 20 mA, VCE = 10 V, f = 20 MHz
CB = 30 V, f = 1 MHz
V
C
obo – 2.5 –
MHzTransition frequency
pFOutput capacitance
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
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