Siemens BFN24, BFN26 Datasheet

NPN Silicon High-Voltage Transistors BFN 24

BFN 26

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: BFN 25, BFN 27 (PNP)

Type Ordering Code

BFN 24
BFN 26

Marking

FHs
FJs

(tape and reel)

Q62702-F1065
Q62702-F976

Pin Configuration

1 2 3

B E C

Package

SOT-23

Maximum Ratings
Parameter Symbol Values Unit

BFN 24 BFN 26

Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0

250 300
250 300

5
Collector current IC mA200
Peak collector current I

CM 500

Base current IB 100
Peak base current I
Total power dissipation, T

S = 74 ˚C Ptot mW

BM 200

360

1)

Junction temperature Tj ˚C
Storage temperature range T

stg

150

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 280 K/W

Junction - soldering point Rth JS ≤ 210

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

07.94

Electrical Characteristics

I

I

I

I
I
I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BFN 24

BFN 26

UnitValuesParameter Symbol

min. typ. max.

VCollector-emitter breakdown voltage

C = 1 mA BFN 24

BFN 26

Collector-base breakdown voltage

C = 100 µA BFN 24

BFN 26

Emitter-base breakdown voltage

E = 100 µA

(BR)CE0

V

250
300

(BR)CB0

V

250
300

V

(BR)EB0 5––

–
–

–
–

–
–

–
–

Collector-base cutoff current

VCB = 200 V BFN 24

CB = 250 V BFN 26

V

CB = 200 V, TA = 150 ˚C BFN 24

V

CB = 250 V, TA = 150 ˚C BFN 26

V

EB = 3 V

V

C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V

1)

1)

BFN 24
BFN 26

Collector-emitter saturation voltage

C = 20 mA, IB = 2 mA BFN 24

1)

BFN 26

Base-emitter saturation voltage

C = 20 mA, IB = 2 mA

1)

I

CB0

–
–
–
–

I

EB0 – – 100

FE

h

25
40
40
30

–
–
–
–

–
–
–
–

100
100
20
20

–
–
–
–

VCEsat

–
–

–
–

0.4

0.5

VBEsat – – 0.9

nA
nA

µA
µA

nAEmitter-base cutoff current

–DC current gain

V

AC characteristics

f

C = 20 mA, VCE = 10 V, f = 20 MHz

CB = 30 V, f = 1 MHz

V

1)

Pulse test conditions: t ≤ 300µs,D = 2 %.

T –70–

C

obo – 1.5 –

Semiconductor Group 2

MHzTransition frequency

pFOutput capacitance