Siemens BFN22 Datasheet

NPN Silicon High-Voltage Transistor BFN 22

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary type: BFN 23 (PNP)

Type Ordering Code

BFN 22 Q62702-F1024HBs SOT-23

Marking

(tape and reel)

Pin Configuration

1 2 3

B E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 250 V

Collector-base voltage VCB0 250
Collector-emitter voltage, R

BE = 2.7 kΩ VCER 250

Emitter-base voltage VEB0 5
Collector current I

C 50 mA

Peak collector current ICM 100

tot 360 mW

Total power dissipation, T

S =71˚C

Junction temperature T
Storage temperature range T

P

j 150 ˚C
stg – 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 290 K/W

Junction - soldering point Rth JS ≤ 220

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BFN 22

Parameter Symbol

UnitValues

min. typ. max.

DC characteristics

V

(BR)CE0 250 – –

C = 1 mA

Collector-base breakdown voltage

C = 10 µA

Collector-emitter breakdown voltage

C = 10 µA, RBE = 2.7 kΩ

Emitter-base breakdown voltage

E = 10 µA

Collector-base cutoff current

CB = 200 V

V

CB = 200 V, TA = 150 ˚C

V

V

(BR)CB0 250 – –

V

(BR)CER 250 – –

V

(BR)EB0 5––

CB0

I

–
–

–
–

100
20

Collector cutoff current

CE = 250 V, RBE = 2.7 kΩ

V

CE = 250 V, TA = 150 ˚C, RBE = 2.7 kΩ

V

Emitter-base cutoff current

EB = 5 V

V

DC current gain

C = 25 mA, VCE = 20 V

C = 10 mA, IB = 1 mA

Base-emitter saturation voltage

C = 10 mA, IB = 1 mA

1)

1)

–
–

I

EB0 ––10

–
–

1
50

hFE 50 – –

1)

V

CEsat – – 0.5

V

BEsat ––1

VCollector-emitter breakdown voltage

nA

µA
µAICER

–

VCollector-emitter saturation voltage

AC characteristics

C = 10 mA, VCE = 10 V, f = 20 MHz

f

T – 100 –

MHzTransition frequency

CB = 30 V, f = 1 MHz

V

C

obo – 0.8 –

pFOutput capacitance

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2