Siemens BFN21 Datasheet

PNP Silicon High-Voltage Transistor BFN 21

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary type: BFN 20 (NPN)

Type Ordering Code

BFN 21 Q62702-F1059DF SOT-89

Marking

(tape and reel)

Pin Configuration

1 2 3

B C E

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 300 V

Collector-base voltage VCB0 300
Collector-emitter voltage, R

BE = 2.7 kΩ VCER 300

Emitter-base voltage VEB0 5
Collector current I

C 50 mA

Peak collector current ICM 100

tot 1W

Total power dissipation, T

S = 120˚C

Junction temperature T
Storage temperature range T

P

j 150 ˚C
stg – 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 90 K/W

Junction - soldering point Rth JS ≤ 30

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BFN 21

Parameter Symbol

UnitValues

min. typ. max.

DC characteristics

V

(BR)CE0 300 – –

C = 1 mA

Collector-base breakdown voltage

C = 10 µA

Collector-emitter breakdown voltage

C = 10 µA, RBE = 2.7 kΩ

Emitter-base breakdown voltage

E = 10 µA

Collector-base cutoff current

CB = 250 V

V

CB = 250 V, TA = 150 ˚C

V

Collector cutoff current

CE = 300 V, RBE = 2.7 kΩ

V

CE = 300 V, TA = 150 ˚C, RBE = 2.7 kΩ

V

Emitter-base cutoff current

EB = 5 V

V

DC current gain

C = 25 mA, VCE = 20 V

C = 10 mA, IB = 1 mA

Base-emitter saturation voltage

C = 10 mA, IB = 1 mA

1)

1)

1)

V

(BR)CB0 300 – –

V(BR)CER 300 – –

V

(BR)EB0 5––

CB0

I

–
–

–
–

I

EB0 ––10

–
–

–
–

100
20

1
50

hFE 40 – –

V

CEsat – – 0.5

V

BEsat ––1

VCollector-emitter breakdown voltage

nA

µA
µAICER

–

VCollector-emitter saturation voltage

AC characteristics

f

T – 100 –

C = 10 mA, VCE = 10 V, f = 20 MHz

CB = 30 V, f = 1 MHz

V

C

obo – 0.8 –

MHzTransition frequency

pFOutput capacitance

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2