Siemens BFN18, BFN16 Datasheet

NPN Silicon High-Voltage Transistors BFN 16

BFN 18

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: BFN 17, BFN 19 (PNP)

Type Ordering Code

BFN 16
BFN 18

Marking

DD
DE

(tape and reel)

Q62702-F885
Q62702-F1056

Pin Configuration

1 2 3

B C E

Package

SOT-89

Maximum Ratings
Parameter Symbol

BFN 16

Collector-emitter voltage V

CE0 250 V

Collector-base voltage VCB0 250
Emitter-base voltage V

EB0

Collector current IC mA
Peak collector current I
Base current I

CM

B

Peak base current IBM
Total power dissipation, TS =130 ˚C Ptot W

Values

BFN 18

300
300

5
200
500
100
200

1

Unit

1)

Junction temperature T
Storage temperature range T

j ˚C
stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Junction - soldering point

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 75 K/W

th JS ≤ 20

R

150

5.91

Electrical Characteristics

I

I

I
I
I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BFN 16

BFN 18

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 1 mA BFN 16

BFN 18

Collector-base breakdown voltage

C = 100 µA BFN 16

(BR)CB0

V

BFN 18

Emitter-base breakdown voltage

E = 100 µA

Collector-base cutoff current

V

(BR)EB0 5––

I

CB0

VCB = 200 V BFN 16

CB = 250 V BFN 18

V

CB = 200 V, TA = 150 ˚C BFN 16

V

CB = 250 V, TA = 150 ˚C BFN 18

V

EB = 3 V

V

I

EB0 – – 100

250
300

250
300

–
–
–
–

–
–

–
–

–
–
–
–

–
–

–
–

100
100
20
20

DC current gain

C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V

1)

1)

BFN 16
BFN 18

Collector-emitter saturation voltage

C = 20 mA, IB = 2 mA BFN 16

1)

BFN 18

Base-emitter saturation voltage

C = 20 mA, IB = 2 mA

1)

BEsat – – 0.9

V

25
40
40
30

–
–

–
–
–
–

–
–

–
–
–
–

0.4

0.5

VCollector-emitter breakdown voltage

nA
nA

µA
µA

nAEmitter-base cutoff current

–hFE

VVCEsat

AC characteristics

f

T –70–

C = 20 mA, VCE = 10 V, f = 20 MHz

CB = 30 V, f = 1 MHz

V

C

obo – 1.5 –

MHzTransition frequency

pFOutput capacitance

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2