Siemens BFN18, BFN16 Datasheet
NPN Silicon High-Voltage Transistors BFN 16
BFN 18
● Suitable for video output stages in TV sets
and switching power supplies
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BFN 17, BFN 19 (PNP)
Type Ordering Code
BFN 16
BFN 18
Marking
DD
DE
(tape and reel)
Q62702-F885
Q62702-F1056
Pin Configuration
1 2 3
B C E
Package
SOT-89
Maximum Ratings
Parameter Symbol
BFN 16
Collector-emitter voltage V
CE0 250 V
Collector-base voltage VCB0 250
Emitter-base voltage V
EB0
Collector current IC mA
Peak collector current I
Base current I
CM
B
Peak base current IBM
Total power dissipation, TS =130 ˚C Ptot W
Values
BFN 18
300
300
5
200
500
100
200
1
Unit
1)
Junction temperature T
Storage temperature range T
j ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 75 K/W
th JS ≤ 20
R
150
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BFN 16
BFN 18
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA BFN 16
BFN 18
Collector-base breakdown voltage
C = 100 µA BFN 16
(BR)CB0
V
BFN 18
Emitter-base breakdown voltage
E = 100 µA
Collector-base cutoff current
V
(BR)EB0 5––
I
CB0
VCB = 200 V BFN 16
CB = 250 V BFN 18
V
CB = 200 V, TA = 150 ˚C BFN 16
V
CB = 250 V, TA = 150 ˚C BFN 18
V
EB = 3 V
V
I
EB0 – – 100
250
300
250
300
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
20
20
DC current gain
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V
1)
1)
BFN 16
BFN 18
Collector-emitter saturation voltage
C = 20 mA, IB = 2 mA BFN 16
1)
BFN 18
Base-emitter saturation voltage
C = 20 mA, IB = 2 mA
1)
BEsat – – 0.9
V
25
40
40
30
–
–
–
–
–
–
–
–
–
–
–
–
0.4
0.5
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter-base cutoff current
–hFE
VVCEsat
AC characteristics
f
T –70–
C = 20 mA, VCE = 10 V, f = 20 MHz
CB = 30 V, f = 1 MHz
V
C
obo – 1.5 –
MHzTransition frequency
pFOutput capacitance
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
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